Electric Power ›› 2021, Vol. 54 ›› Issue (1): 70-77.DOI: 10.11930/j.issn.1004-9649.202006217
Previous Articles Next Articles
FENG Jingbo1, LV Zheng1, DENG Weihua2, HU Rong2, WANG Xinying1
Received:
2020-06-23
Revised:
2020-10-29
Online:
2021-01-05
Published:
2021-01-11
Supported by:
FENG Jingbo, LV Zheng, DENG Weihua, HU Rong, WANG Xinying. Study on the IGBT Overcurrent Failure of VSC-HVDC Converter Valve[J]. Electric Power, 2021, 54(1): 70-77.
[1] 汤广福, 贺之渊, 庞辉. 柔性直流输电工程技术研究、应用及发展[J]. 电力系统自动化, 2013, 37(15): 3-14 TANG Guangfu, HE Zhiyuan, PANG Hui. Research, application and development of VSC-HVDC engineering technology[J]. Automation of Electric Power Systems, 2013, 37(15): 3-14 [2] 金锐, 于坤山, 张朋, 等. IGBT器件的发展现状以及在智能电网中的应用[J]. 智能电网, 2013, 1(2): 11-16 JIN Rui, YU Kunshan, ZHANG Peng, et al. Development of IGBT devices and the typical application in the smart grid[J]. Smart Grid, 2013, 1(2): 11-16 [3] 于坤山, 谢立军, 金锐. IGBT技术进展及其在柔性直流输电中的应用[J]. 电力系统自动化, 2016, 40(6): 139-143 YU Kunshan, XIE Lijun, JIN Rui. Recent development and application prospects of IGBT in flexible HVDC power system[J]. Automation of Electric Power Systems, 2016, 40(6): 139-143 [4] 姚良忠, 吴婧, 王志冰, 等. 未来高压直流电网发展形态分析[J]. 中国电机工程学报, 2014, 34(34): 6007-6020 YAO Liangzhong, WU Jing, WANG Zhibing, et al. Pattern analysis of future HVDC grid development[J]. Proceedings of the CSEE, 2014, 34(34): 6007-6020 [5] 邵峰, 杨晋霞. 基于电压电平的MMC模型预测控制[J]. 电力科学与技术学报, 2020, 35(2): 12-21. SHAO Feng, YANG Jinxia. Model predictive control of modular multilevel converter based on voltage level[J]. Journal of Electric Power Science and Technology, 2020, 35(2): 12-21. [6] 徐经民, 徐在德, 童超. 基于模糊下垂控制的VSC-HVDC交直流系统潮流计算方法[J]. 电力系统保护与控制, 2019, 47(20): 50-57. XU Jingmin, XU Zaide, TONG Chao. Power flow algorithm for VSC-HVDC AC/DC system based on fuzzy drop control[J]. Power System Protection and Control, 2019, 47(20): 50-57. [7] 李安琦, 邓二平, 任斌, 等. 不同结构压接型IGBT器件压力分布对比[J]. 中国电力, 2019, 52(9): 11-19, 29 LI Anqi, DENG Erping, REN Bin, et al. Comparison of clamping force distribution within press-pack IGBTs of different structures[J]. Electric Power, 2019, 52(9): 11-19, 29 [8] 马晋, 王富珍, 王彩琳. IGBT失效机理与特征分析[J]. 电力电子技术, 2014, 48(3): 71-73, 76 MA Jin, WANG Fuzhen, WANG Cailin. Analysis of failure mechanism and features of IGBT[J]. Power Electronics, 2014, 48(3): 71-73, 76 [9] 罗湘, 汤广福, 温家良, 等. 电压源换流器高压直流输电装置中IGBT的过电流失效机制[J]. 中国电机工程学报, 2009, 29(33): 1-7 LUO Xiang, TANG Guangfu, WEN Jialiang, et al. Over-current failure mechanism of IGBT within voltage source converter based high voltage direct current[J]. Proceedings of the CSEE, 2009, 29(33): 1-7 [10] 黄南, 王世平, 宋自珍. 兆瓦级功率组件IGBT失效研究[J]. 大功率变流技术, 2015(3): 35-38 HUANG Nan, WANG Shiping, SONG Zizhen. Study of the IGBT failure in megawatt power assembly[J]. High Power Converter Technology, 2015(3): 35-38 [11] HIERHOLZER M, BAYERER R, PORST A, et al. Improved characteristics of 3.3 kV IGBT modules[C]//Proceedings of the PCIM, Nuremberg, 1997: 201–205. [12] 刘国友, 黄建伟, 覃荣震, 等. 智能电网用高功率密度1 500A/3 300V绝缘栅双极晶体管模块[J]. 中国电机工程学报, 2016, 36(10): 2784-2792 LIU Guoyou, HUANG Jianwei, QIN Rongzhen, et al. High power density 1 500A/3 300V insulated gate bipolar transistor module for smart grid application[J]. Proceedings of the CSEE, 2016, 36(10): 2784-2792 [13] XU Tianning, DONOGHUE M W, DAVISON C C. IGBT overcurrent turn-off tests for the MMC-based VSC valves[C]//15th European Conference on Power Electronics and Applications, 2013: 1–10. [14] LUTZ J, DOBLER R, MARI J, et al. Short circuit Ⅲ in high powers IGBTs[C]//13th European Conference on Power Electronics and Applications, 2009: 1–9. [15] OHI T, IWATA A, ARAI K. Investigation of gate voltage oscillations in an IGBT module under short circuit conditions[J]. Proceedings of the Power Electronics Specialists Conference, IEEE, 2002, 33(4): 1758-1763. |
[1] | LUO Haoze, CHEN Zhong, YANG Wei, XIE Jia, HU Di, GUAN Weiping. Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices [J]. Electric Power, 2023, 56(5): 137-152. |
[2] | LI Biaojun, LENG Mei, DAI Jiashui, WANG Ning. Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT [J]. Electric Power, 2023, 56(2): 53-58,67. |
[3] | TANG Wei, YU Su, ZHENG Tao, YU Huanchang, NI Yuxiang, MENG Lingkun. A Novel Protection Scheme of AC and DC Line-Touching Based on Coordination of AC and DC Protection [J]. Electric Power, 2022, 55(11): 41-50. |
[4] | LI Biaojun, CHU Haiyang, ZHUANG Zhifa, WEN Jun. Accelerate Aging Test Method for Press-Pack IGBT Power Module [J]. Electric Power, 2022, 55(10): 87-91. |
[5] | CHEN Jie, DENG Erping, ZHAO Zixuan, YING Xiaoliang, HUANG Yongzhang. Calibration Methods for Junction Temperature Measurement of High Power IGBT Modules [J]. Electric Power, 2021, 54(8): 109-117. |
[6] | DENG Erping, MENG Heli, WANG Yanhao, ZHAO Zhibin, HUANG Yongzhang. 6 kV/180 ℃ High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices [J]. Electric Power, 2021, 54(2): 133-139. |
[7] | SHEN Hong, TONG Cuizhi, DONGYE Zhonghao, QI Lei, WANG Qian. Experimental Modeling of Forward Recovery Characteristics of IGBT for DC Circuit Breaker [J]. Electric Power, 2021, 54(1): 54-61. |
[8] | TANG Xinling, LIN Zhongkang, ZHANG Xizi, YAN Shumin, SU Bing, WANG Liang, HAN Ronggang, SHI Hao. Mechanical Stress Analysis in High Power Press Pack IGBT [J]. Electric Power, 2020, 53(12): 62-74. |
[9] | LIU Guoyou, WANG Yangang, LUO Haihui, QI Fang, LI Xiang, WU Yibo. A Review of Thermal Design for IGBT Module [J]. Electric Power, 2020, 53(12): 55-61,74. |
[10] | HAN Lubin, LIANG Lin, KANG Yong. Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device [J]. Electric Power, 2020, 53(12): 37-44. |
[11] | LI Li, WANG Yaohua, GAO Mingchao, LIU Jiang, JIN Rui. Design and Development of 4500 V Trench Gate IGBT [J]. Electric Power, 2020, 53(12): 30-36. |
[12] | DENG Zhenyu, CHEN Minyou, LAI Wei, LI Hui, WANG Xiao, LI Jinyuan, DU Yaoting. Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT [J]. Electric Power, 2020, 53(12): 10-17. |
[13] | WANG Xiping, DING Xiangkuan, YAO Fang, TANG Shengxue, LI Zhigang. Review of Failure Mechanism and State Monitoring Technology for IGBT Modules [J]. Electric Power, 2019, 52(9): 61-72. |
[14] | ZHANG Jin, QIU Zhijie, WANG Lei, NING Puqi. Comparison and Analysis of Power Cycling and Thermal Cycling Lifetime of Power Semiconductor Modules for Vehicles [J]. Electric Power, 2019, 52(9): 54-60. |
[15] | DENG Erping, MENG Heli, WANG Yanhao, WU Yuxuan, ZHAO Zhibin, HUANG Yongzhang. High Temperature Gate Bias Test Equipment for High Voltage and High Power Devices [J]. Electric Power, 2019, 52(9): 48-53,72. |
Viewed | ||||||||||||||||||||||||||||||||||||||||||||||||||
Full text 342
|
|
|||||||||||||||||||||||||||||||||||||||||||||||||
Abstract 82
|
|
|||||||||||||||||||||||||||||||||||||||||||||||||