6 kV/180 ℃ High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices

doi:10.11930/j.issn.1004-9649.201906002

Abstract

Abstract: High Temperature Reverse Bias (HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the tested device. To Meet the requirements of space, accuracy and reliability for test equipment, HTRB test equipment with voltage level of 6 kV and ambient temperature of 180 ℃ was independently built for high voltage and high power devices. Further, the test equipment integrates some functions such as automatic measurement of temperature-drain current relationship curve and high-frequency acquisition of failure data, which can better monitor the state of the tested device for reliability evaluation and failure analysis. For the purpose of testing the function and reliability of the test device and getting the relationship curve of leakage current–temperature and aging time–leakage current, some commercial IGBT devices were tested with the equipment. Leakage current–temperature curve is an exponential function and aging time–leakage current curve is increasing slowly. This equipment realizes the test requirement of high voltage and high power devices, suiting for different packages of IGBTs.

Key words: high voltage and high power IGBTs, HTRB, accelerated aging testing, edge termination, leakage current

DENG Erping, MENG Heli, WANG Yanhao, ZHAO Zhibin, HUANG Yongzhang. 6 kV/180 ℃ High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices[J]. Electric Power, 2021, 54(2): 133-139.

Add to citation manager EndNote|Ris|BibTeX

URL: https://www.electricpower.com.cn/EN/10.11930/j.issn.1004-9649.201906002

https://www.electricpower.com.cn/EN/Y2021/V54/I2/133

References

[1] 梁旭明, 张平, 常勇. 高压直流输电技术现状及发展前景[J]. 电网技术, 2012, 36(4): 1-9
LIANG Xuming, ZHANG Ping, CHANG Yong. Recent advances in high-voltage direct-current power transmission and its developing potential[J]. Power System Technology, 2012, 36(4): 1-9
[2] 邓二平, 张经纬, 李尧圣, 等. 焊接式IGBT模块与压接型IGBT器件可靠性差异分析[J]. 半导体技术, 2016, 41(11): 801-810, 815
DENG Erping, ZHANG Jingwei, LI Yaosheng, et al. Analysis of the reliability difference between IGBT modules and press-pack IGBTs[J]. Semiconductor Technology, 2016, 41(11): 801-810, 815
[3] Semiconductor Quality and Reliability Handbook, Chapter 2 Semiconductor Device Reliability Verification[EB/OL]. [2012-11-06].http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.126.1621.
[4] 董少华, 刘钺杨, 何延强, 等. HTRB试验方法及现象研究[J]. 智能电网, 2016, 4(12): 1200-1203
DONG Shaohua, LIU Yueyang, HE Yanqiang, et al. Research on the test method and results of HTRB[J]. Smart Grid, 2016, 4(12): 1200-1203
[5] 樊强. 高加速寿命试验和高加速应力筛选试验技术综述[J]. 电子产品可靠性与环境试验, 2011, 29(4): 58-62
FAN Qiang. Overview of HALT & HASS[J]. Electronic Product Reliability and Environmental Testing, 2011, 29(4): 58-62
[6] International Electrotechnical Commission. Semiconductor devicesdiscrete devices-part 9: insulated-gate bipolar transistors (IGBTs): IEC 60747-9[S]. Switzerland, 2001．
[7] Department of Defense Supply Center. Semiconductor devices, general specification for: MIL-PRF-19500N[S]. 2005.
[8] MAIGA C O, TALA-IGHIL B, TOUTAH H, et al. Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution[C]//European Conference on Power Electronics & Applications. IEEE, 2006.
[9] MAÏGA, CHEICK O, TOUTAH H, et al. Comparison between the behaviour of punch-through and non-punch-through insulated gate bipolar transistors under high temperature reverse bias stress[J]. Microelectronics Reliability, 2004, 44(9/10/11): 1461-1465.
[10] SAMBI M, GALLO M, GALBIATI P. 190V N-channel lateral IGBT integration in SOI 0.35 μm BCD technology[C]//2008 IEEE International Electron Devices Meeting. IEEE, 2009.
[11] TOŠIĆ N, PEŠIĆ B, STOJADINOVIĆ N. High-temperature-reverse-bias testing of power VDMOS transistors[J]. Microelectronics and Reliability, 1997, 37(10/11): 1759-1762.
[12] OKAYAMA T, ARTHUR S D, RAO R R, et al. Stability and 2-D simulation studies of avalanche breakdown in 4H-SiC DMOSFETs with JTE[J]. IEEE Transactions on Electron Devices, 2008, 55(2): 489-494.
[13] HUANG C F, HSU H C, CHU K W, et al. Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 354-358.
[14] CONSENTINO G, DE PASQUALE D, GALIANO S, et al. Innovative instrumentation for HTRB tests on semiconductor power devices[C]//AEIT Annual Conference 2013. Mondello (Italy): IEEE, 2013.
[15] HU J, STOFFELS S, ZHAO M, et al. Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests[J]. IEEE Electron Device Letters, 2017, 38(3): 371-374.
[16] GREEN R, LELIS A, HABERSAT D. Application of reliability test standards to SiC Power MOSFETs[C]//Reliability Physics Symposium. IEEE, 2011.
[17] HOFFMANN F, MIHAILA A, KRANZ L, et al. Long term high temperature reverse bias (HTRB) test on high voltage SiC-JBS-diodes[C]//2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2018.
[18] MATSUSHIMA H, YAMADA R, SHIMA A. Two mechanisms of charge accumulation in edge termination of 4H-SiC diodes caused by high-temperature bias stress and high-temperature and high-humidity bias stress[J]. IEEE Transactions on Electron Devices, 2018, 65(8): 3318-3325.
[19] AVINO-SALVADO O, CHENG C, BUTTAY C, et al. SiC MOSFETs robustness for diode-less applications[J]. EPE Journal, 2018, 28(3): 128-135.
[20] 郝林钊, 何山, 王维庆, 等. 一种基于CR-CD型电路的直驱风机变流器IGBT过电压保护电路研究[J]. 电力系统保护与控制, 2019, 47(9): 150-157.
HAO Linzhao, HE Shan, WANG Weiqing, et al. Research on IGBT overvoltage protection circuit of direct drive wind turbine converter based on CR-CD circuit[J]. Power System Protection and Control, 2019, 47(9): 150-157.