[1] 盛况, 郭清, 张军明, 等. 碳化硅电力电子器件在电力系统的应用展望[J]. 中国电机工程学报, 2012, 32(30):1-7
SHENG Kuang, GUO Qing, ZHANG Junming, et al. Development and prospect of SiC power devices in power grid[J]. Proceedings of the CSEE, 2012, 32(30):1-7
[2] GHANDI R, CHEN C P, YIN L, et al. Silicon carbide integrated circuits with stable operation over a wide temperature range[J]. IEEE Electron Device Letters, 2014, 35(12):1206-1208.
[3] HULL B, CALLANAN R, DAS M, et al. 20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems[C]//Proceedings of Energy Conversion Congress and Exposition. San Jose, CA, USA, 2009:112−119.
[4] UDREA, MIHAIL A, RASHI D, et al. A double channel normally-off SiC JFET device with ultra-low on-state resistance[C]//Proceedings of the International Symposium on Power Semiconductor Devices and Ics. Kitakyushu, Japan, 2004:309−312.
[5] BALIGA B. Fundamentals of power semiconductor devices[M]. USA:Springer, 2010.
[6] YANG S, XIANG D, BRYANT A, et al. Condition monitoring for device reliability in power electronic converters:a review[J]. IEEE Transactions on Power Electronics, 2010, 25(11):2734-2752.
[7] YANG T C, SARASWAT K C. Effect of physical stress on the degradation of thin SiO2 films under electrical stress[J]. IEEE Transactions on Electron Devices, 2000, 47(4):746-755.
[8] SINGH R. Reliability and performance limitations in SiC power devices[J]. Microelectronics Reliability, 2006, 46(5/6):713-730.
[9] AGARWAL A K, SESHADRI S, ROWLAND L B. Temperature dependence of Fowler-Nordheim current in 6H-and 4H-SiC MOS capacitors[J]. IEEE Electron Device Letters, 1997, 18(12):592-594.
[10] YU L C, CHEUNG K P, CAMPBELL J, et al. Oxide reliability of SiC MOS devices[C]//Proceedings of Integrated Reliability Workshop Final Report. S. Lake Tahoe, CA, USA, 2009:141-144.
[11] YU L C, DUNNE G T, MATOCHA K S, et al. Reliability issues of SiC MOSFETs:A technology for high-temperature environments[J]. IEEE Transactions on Device and Materials Reliability, 2010, 10(4):418-426.
[12] LELIS A J, HABERSAT D, GREEN R, et al. Time dependence of bias-stress-induced SiC MOSFET threshold voltage instability measurements[J]. IEEE Transactions on Electron Devices, 2008, 55(8):1835-1840.
[13] CHEN Z, YAO Y, DANILOVIC M, et al. Performance evaluation of SiC power MOSFETs for high-temperature applications[C]//Power Electronics & Motion Control Conference. IEEE, 2013.
[14] SADEGH M, MOSTAFA Z, SHAHRIYAR K, et al. A series stacked igbt switch with robustness against short-circuit fault for pulsed power applications[J]. IEEE Transactions on Power Electronics, 2018, 33(5):3779-3790.
[15] YANG Xin, YUAN Ye, LONG Zhiqiang, et al. Robust stability analysis of active voltage control for high-power igbt switching by Kharitonov's theorem[J]. IEEE Transactions on Power Electronics, 2016, 31(3):2584-2595.
[16] LUO Peng, LONG H Y, NARAYANAN E M S. A novel approach to suppress the collector-induced barrier lowering effect in narrow mesa IGBTs[J]. IEEE Electron Device Letters, 2018, 39(9):1350-1353.
[17] CHEN Z, YAO Y, DANILOVIC M, et al. Performance evaluation of SiC power MOSFETs for high-temperature applications[C]//Proceedings of the 15th International Power Electronics and Motion Control Conference. Novi Sad, Serbia, 2013:DS1a. 8-1-DS1a. 8−9.
[18] SANTINI T, SEBASTIEN M, FLORENT M, et al. Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications[C]//Proceedings of IEEE ECCE Asia Downunder. Melbourne, VIC, Australia, 2013:385−391.
[19] 邓小川, 陈茜茜, 王弋宇, 等. 1200 V SiC MOSFET晶体管的高温可靠性研究[J]. 大功率变流技术, 2016(5):62-64
DENG Xiaochuan, CHEN Qianqian, WANG Yiyu, et al. High-temperature reliability of 1200 V SiC power MOSFETs[J]. High Power Converter Technology, 2016(5):62-64
[20] 徐鹏, 邹琦, 谢宗奎, 等. 碳化硅MOSFET器件高温栅偏特性的实验分析[J]. 半导体技术, 2018, 43(10):752-759
XU Peng, ZOU Qi, XIE Zongkui, et al. Experimental analysis on high-temperature gate bias characteristics of silicon carbide MOSFET devices[J]. Semiconductor Devices, 2018, 43(10):752-759
|
