Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device

doi:10.11930/j.issn.1004-9649.202007196

Abstract

Abstract: In the rigid Press-Pack IGBT module, the pressure distribution of parallel chips determines the contact thermal resistance and contact electrical resistance directly. However, the distribution of pressure and thermal resistance cannot be measured during the normal operation. In order to analyze the pressure distribution and thermal resistance distribution of each sub-module in the Press-Pack IGBT module, the method of measuring the thermal resistance distribution of the parallel sub-modules of the Press-Pack IGBT module is proposed, which is based on the devices characteristics and thermal resistance test. Then, the distributions of thermal resistance under different pressures and currents are studied in detail. The experimental results show that the distribution of junction temperature, current and thermal resistance among the parallel sub-modules in the IGBT module are greatly dispersed due to the difference of external pressure, devices characteristics and connecting conductors. The proposed measurement method could effectively verify the distribution characteristics of junction temperature, thermal resistance and pressure of the Press-Pack IGBT module under certain packaging conditions.

Key words: press-pack IGBT, thermal resistance measurement, temperature distribution, pressure distribution, thermal resistance distribution

HAN Lubin, LIANG Lin, KANG Yong. Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device[J]. Electric Power, 2020, 53(12): 37-44.

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URL: https://www.electricpower.com.cn/EN/10.11930/j.issn.1004-9649.202007196

https://www.electricpower.com.cn/EN/Y2020/V53/I12/37

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