Design and Development of 4500 V Trench Gate IGBT

doi:10.11930/j.issn.1004-9649.202006300

Abstract

Abstract: In this paper, a 4500 V trench gate IGBT chip was developed, so as to improve the single chip current density as well as to master the technology of high voltage trench gate IGBT. Using the TCAD simulation software, experiments were carried out on the aspects of the substrate material, carrier stored layer design, trench width, trench depth and dummy trench gate structure, whose impacts on the chip performance were analyzed. According to the overall design goal, the chip structure and process parameters were determined, and the 4500 V trench gate IGBT chip was fabricated and verified. The test results of 4500 V trench gate IGBT chip can meet the design expectation, and its key parameters, such as rated current, saturation voltage, turn-on switching energy and turn-off switching energy, have been significantly improved compared with the planar gate IGBT chip.

Key words: trench gate, IGBT, simulation, substrate, carrier stored layer, dummy trench

LI Li, WANG Yaohua, GAO Mingchao, LIU Jiang, JIN Rui. Design and Development of 4500 V Trench Gate IGBT[J]. Electric Power, 2020, 53(12): 30-36.

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URL: https://www.electricpower.com.cn/EN/10.11930/j.issn.1004-9649.202006300

https://www.electricpower.com.cn/EN/Y2020/V53/I12/30

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