Review of Failure Mechanism and State Monitoring Technology for IGBT Modules

doi:10.11930/j.issn.1004-9649.201907034

Abstract

Abstract: With the continuous increasing of the performance requirements for power electronic systems, the power device IGBT modules must not only have high power density, but also have good thermo-mechanical properties to improve their reliability. In this paper, the failure mechanism of IGBT modules is introduced firstly, and the failure mechanism of bonding wires and solder layers is described in detail. The health state monitoring of IGBT modules is mainly introduced, and the research progress of health monitoring about junction temperature, bonding wire and solder layer and their quantitative evaluations are analyzed in detail. Finally, from reducing the thermal-mechanical stress for improving the reliability design of the package and the on-line monitoring development under the operating conditions, the prospects are presented.

Key words: IGBT modules, reliability, failure mechanism, state monitoring, bonding resistance, transient thermal impedance

CLC Number:

TN322

WANG Xiping, DING Xiangkuan, YAO Fang, TANG Shengxue, LI Zhigang. Review of Failure Mechanism and State Monitoring Technology for IGBT Modules[J]. Electric Power, 2019, 52(9): 61-72.

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URL: https://www.electricpower.com.cn/EN/10.11930/j.issn.1004-9649.201907034

https://www.electricpower.com.cn/EN/Y2019/V52/I9/61

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