Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips

doi:10.11930/j.issn.1004-9649.201805131

Abstract

Abstract: High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the difference of package parasitic parameters caused by inconsistent internal layout of paralleled IGBT chips is introduced in this paper. Secondly, combined with the equivalent circuit model of IGBT and its switching characteristics, the influence of parasitic parameters on the transient current distribution characteristics of parallel IGBT chips is analyzed. Then, the equivalent circuit model of parallel IGBT chip is established, and the simulation circuit is built by Synopsys Saber software. From the differences of package parasitic inductance parameters and package parasitic resistance parameters, the influence of parameters differences on the transient current distribution characteristics of parallel chip is analyzed. In this paper, the influence of various package parasitic parameters on the transient current distribution is considered comprehensively, which is of great significance for optimizing the transient current consistency of multi-chip parallel connection.

Key words: IGBT, parallel chips, parasitic inductance, parasitic resistance, transient current distribution

CLC Number:

TM152

SHI Hao, WU Pengfei, TANG Xinling, DONG Jianjun, HAN Ronggang, ZHANG Peng. Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips[J]. Electric Power, 2019, 52(8): 16-25.

Add to citation manager EndNote|Ris|BibTeX

URL: https://www.electricpower.com.cn/EN/10.11930/j.issn.1004-9649.201805131

https://www.electricpower.com.cn/EN/Y2019/V52/I8/16

References

[1] 花国祥, 魏晓光, 高阳. 混合式高压直流断路器数据监测平台的研制[J]. 中国电力, 2015, 48(10):84-89 HUA Guoxiang, WEI Xiaoguang, GAO Yang. Design of the monitoring system for hybrid arc-less high voltage direct current circuit breaker[J]. Electric Power, 2015, 48(10):84-89
[2] 陈耀军, 陈柏超, 田翠华, 等. 模块化多电平变换器的系统状态方程及等效模型[J]. 中国电机工程学报, 2015, 35(1):167-176 CHEN Yaojun, CHEN Baichao, TIAN Cuihua, et al. The system state equation and equivalent model of modular multilevel converters[J]. Proceedings of CSEE, 2015, 35(1):167-176
[3] 覃荣震, 刘国友, 黄建伟. 轨道交通用IGBT模块互连技术及其发展趋势[J]. 机车电传动, 2013(3):1-5 QIN Rongzhen, LIU Guoyou, HUANG Jianwei. Technical progress and trend of interconnection in IGBT module for railway transportation[J]. Electric Drive for Locomotives, 2013(3):1-5
[4] SIMON E. StakPak:a 4.5 kV Press-Pack IGBT with extremely rugged SPT Chips[C]//The 39th LAS Annual Meeting on Industry Applications Conference. Seattle, USA, 2005:1534-1539.
[5] WAKEMAN F, BILLETT K, IRONS R, et al. Electromechanical characteristics of a bondless pressure contact IGBT[C]//The 14th Applied Power Electronics Conference and Exposition. Texas, USA, 1999:312-317.
[6] URBAN A, ANDERS H, CHRISTER L, et al. Gotland HVDC light transmission-world's first commercial small scale dc transmission[C]//CIRED Conference. Nice. France, 1999:32-36.
[7] 丁骁, 汤广福, 韩民晓, 等. IGBT串联阀混合式高压直流断路器分断应力分析[J]. 中国电机工程学报, 2018, 38(6):1846-1856, 1922 DING Xiao, TANG Guangfu, HAN Minxiao et al. Analysis of the turn-off stress on hybrid DC circuit breaker with IGBT series valve[J]. Proceedings of the CSEE, 2018, 38(6):1846-1856, 1922
[8] 魏晓光, 杨兵建, 汤广福. 高压直流断路器技术发展与工程实践[J]. 电网技术, 2017, 41(10):3180-3188 WEI Xiaoguang, YANG Bingjian, TANG Guangfu. Technical development and engineering applications of HVDC circuit breaker[J]. Power System Technology, 2017, 41(10):3180-3188
[9] 吴寒, 王维庆, 王海云, 等. 基于柔性直流输电技术的风电场暂态稳定性[J]. 中国电力, 2014, 47(12):99-104 WU Han, WANG Weiqing, WANG Haiyun, et al. Study on transient stability of VSC-HVDC-based wind farm[J]. Electric Power, 2014, 47(12):99-104
[10] 罗映红, 许义佳, 史彤彤,等. 具有直流故障阻断能力的混合型模块化多电平换流器[J]. 中国电力, 2018, 51(5):1-9 LUO Yinghong, XU Yijia, SHI Tongtong, et al. Hybrid topology of modular multilevel converter with DC fault blocking capability[J]. Electric Power, 2018, 51(5):1-9
[11] 余世峰, 阮江军, 刘兵, 等. VSC-HVDC换流站电磁辐射计算[J]. 高电压技术, 2009, 35(8):1980-1985 YU Shifeng, RUAN Jiangjun, LIU Bing, et al. Calculation of electromagnetic radiation of VSC-HVDC converter stations[J]. High Voltage Engineering, 2009, 35(8):1980-1985
[12] LETOR R. Static and dynamic behaviour of paralleled IGBTs[J]. IEEE Transactions on Industry Applications, 1992, 28(2):395-402.
[13] PALMER P R, STARK P R, JOYCE B H. Non-Invasive measurement of chip currents in IGBT modules[C]//The 28th Annual Conference on Power Electronics Specialists. USA, 1997:166-171.
[14] OHI T, HORIGUCHI T, OKUDA T, et al. Analysis and measurement of chip current imbalances caused by the structure of bus bars in an IGBT module[C]//The 34th IAS Conference on Industry Applications. USA, 1999:1775-1779.
[15] MORISHITA K, KITAMURA S, YAMAGUCHI Y, et al. Investigations of parallel connected IGBT's using electromagnetic field analysis[C]//European Conference on Power Electronics and Applications. Gerwany, 2005.
[16] JOYCE, ChARLES J. Current sharing and redistribution in high power IGBT modules[D]. University of Cambridge, 2001.
[17] AZAR R, UDREA F, NG W T, et al. The current sharing optimization of paralleled IGBTs in a power module tile using a pSpice frequency dependent impedance model[J]. IEEE Transactions on Power Electronics, 2008, 23(1):206-217.
[18] MARTIN C, SCHANEN J L, GUICHON J M, et al. Analysis of electromagnetic coupling and current distribution inside a power module[J]. IEEE Transactions on Industry Applications, 2007, 43(4):893-901.
[19] ZHONG Y, WEN X, SUN W, et al. A novel IGBT package to reduce current imbalance with pinfin baseplate[C]//IEEE Energy Conversion Congress and Exposition. USA, 2013:268-272.
[20] LIANG K, ZhANG J, QIU Z, et al. Research and measurement of chip current imbalance in IGBT module with multiple chips in parallel[C]//IEEE International Conference on Electrical Machines and Systems. Busan, 2013:1851-1856.
[21] WU R, SMIRNOVA L, WANG H, et al. Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules[C]//IEEE International Conference on Power Electronics and Ecce Asia. Seoul, 2015:850-856.
[22] 唐新灵, 崔翔, 张朋, 等. 感性负载条件下IGBT开通过程分析[J]. 华北电力大学学报(自然科学版), 2017, 44(2):33-41 TANG Xinling, CUI Xiang, ZHANG Peng, et al. Analysis on IGBT turn-on transient under inductive load[J]. Journal of North China Electric Power University, 2017, 44(2):33-41