Electric Power ›› 2020, Vol. 53 ›› Issue (12): 55-61,74.DOI: 10.11930/j.issn.1004-9649.202007137

Previous Articles     Next Articles

A Review of Thermal Design for IGBT Module

LIU Guoyou1, WANG Yangang1,2,3, LUO Haihui1,2, QI Fang2, LI Xiang1,3, WU Yibo1,2   

  1. 1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, 412001, China;
    2. Zhuzhou CRRC Times Electric Semiconductor Co., Ltd., Zhuzhou, 412001, China;
    3. Dynex Semiconductor Co., Ltd., Lincoln LN6 3LF, UK
  • Received:2020-07-28 Revised:2020-10-14 Published:2020-12-16
  • Supported by:
    This work is supported by National Key R&D Program of China (No.2017YFB01023, No.2017YFB0102303)

Abstract: In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed. Then, the thermal design of IGBT module is investigated in terms of semiconductor chip, packaging structure and material. Finally, the main thermal design aspects of conventional IGBT module and new press-pack IGBT module are presented.

Key words: IGBT module, thermal design, reliability