Electric Power ›› 2019, Vol. 52 ›› Issue (9): 54-60.DOI: 10.11930/j.issn.1004-9649.201907058

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Comparison and Analysis of Power Cycling and Thermal Cycling Lifetime of Power Semiconductor Modules for Vehicles

ZHANG Jin, QIU Zhijie, WANG Lei, NING Puqi   

  1. Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering of Chinese Academy of Sciences, Beijing 100190, China
  • Received:2019-07-05 Revised:2019-07-16 Online:2019-09-05 Published:2019-09-19
  • Supported by:
    This research is supported by National Key R&D Program of China (No.2018YFB0104500).

Abstract: The power semiconductor module is more and more widely used in human transportation field, like electric vehicle and high-speed train. These applications in which the personnel safety is seriously concerned usually require power modules with higher reliability. In this paper, the typical automotive and industrial grade insulated gate bipolar transistors (IGBT) were selected. Both the power cycling and thermal cycling tests were carried out to compare the reliability differences. The experimental results showed that the thermal cycling lifetime of automotive IGBTs was obviously better than that of industrial grade products. However, the power cycling lifetime of automotive IGBT was worse than that of the industrial grade product.

Key words: IGBT, power cycling, thermal cycling, reliability

CLC Number: