4 500 V沟槽栅IGBT芯片的设计与研制

doi:10.11930/j.issn.1004-9649.202006300

中国电力 ›› 2020, Vol. 53 ›› Issue (12): 30-36.DOI: 10.11930/j.issn.1004-9649.202006300

• 国家“十三五”智能电网重大专项专栏：（三 ) 高压大功率 IGBT 及应用技术专栏 • 上一篇下一篇

4 500 V沟槽栅IGBT芯片的设计与研制

李立^1,2, 王耀华^1,2, 高明超^1,2, 刘江^1,2, 金锐^1,2

1. 先进输电技术国家重点实验室，北京 102209;
2. 全球能源互联网研究院有限公司，北京 102209

收稿日期:2020-07-06 修回日期:2020-09-22 发布日期:2020-12-16
作者简介:李立（1989—），男，通信作者，硕士，工程师，从事功率半导体芯片研究，E-mail：lili@geiri.sgcc.com.cn
基金资助:
国家电网有限公司科技项目（高压沟槽栅型IGBT芯片设计与工艺开发技术研究，5455GB180007）

Design and Development of 4500 V Trench Gate IGBT

LI Li^1,2, WANG Yaohua^1,2, GAO Mingchao^1,2, LIU Jiang^1,2, JIN Rui^1,2

1. State Key Laboratory of Advanced Power Transmission Technology, Beijing 102209, China;
2. Global Energy Interconnection Research Institute Co., Ltd., Beijing 102209, China

Received:2020-07-06 Revised:2020-09-22 Published:2020-12-16
Supported by:
This work is supported by Science and Technology Project of SGCC (Research on Design and Technology Development of High Voltage Trench Gate IGBT Chip, No.5455GB180007)

摘要/Abstract

摘要： 为提升IGBT单芯片的电流密度，掌握高压沟槽栅IGBT技术，进行4500 V沟槽栅IGBT芯片的研制。使用TCAD仿真软件，对4500 V沟槽栅IGBT的衬底材料、载流子储存层设计、沟槽宽度、沟槽深度、假栅结构等方面进行研究和仿真分析，明确各方面设计与芯片性能的关系。根据总体设计目标，确定相应的芯片结构和工艺参数，并对4500 V沟槽栅IGBT芯片进行流片验证。验证结果显示：4500 V沟槽栅IGBT芯片的测试结果符合设计预期，芯片的额定电流、导通压降、开通损耗和关断损耗等关键参数相比平面栅IGBT芯片有明显优化。

关键词: 沟槽栅, IGBT, 仿真, 衬底, 载流子存储层, 假栅结构

Abstract: In this paper, a 4500 V trench gate IGBT chip was developed, so as to improve the single chip current density as well as to master the technology of high voltage trench gate IGBT. Using the TCAD simulation software, experiments were carried out on the aspects of the substrate material, carrier stored layer design, trench width, trench depth and dummy trench gate structure, whose impacts on the chip performance were analyzed. According to the overall design goal, the chip structure and process parameters were determined, and the 4500 V trench gate IGBT chip was fabricated and verified. The test results of 4500 V trench gate IGBT chip can meet the design expectation, and its key parameters, such as rated current, saturation voltage, turn-on switching energy and turn-off switching energy, have been significantly improved compared with the planar gate IGBT chip.

Key words: trench gate, IGBT, simulation, substrate, carrier stored layer, dummy trench

李立, 王耀华, 高明超, 刘江, 金锐. 4 500 V沟槽栅IGBT芯片的设计与研制[J]. 中国电力, 2020, 53(12): 30-36.

LI Li, WANG Yaohua, GAO Mingchao, LIU Jiang, JIN Rui. Design and Development of 4500 V Trench Gate IGBT[J]. Electric Power, 2020, 53(12): 30-36.

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https://www.electricpower.com.cn/CN/Y2020/V53/I12/30

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4 500 V沟槽栅IGBT芯片的设计与研制

Design and Development of 4500 V Trench Gate IGBT

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