功率器件高温高湿高压反偏测试研究综述

doi:10.11930/j.issn.1004-9649.202005133

中国电力 ›› 2020, Vol. 53 ›› Issue (12): 18-29.DOI: 10.11930/j.issn.1004-9649.202005133

• 国家“十三五”智能电网重大专项专栏：（三 ) 高压大功率 IGBT 及应用技术专栏 • 上一篇下一篇

功率器件高温高湿高压反偏测试研究综述

王延浩¹, 邓二平^1,2, 黄永章^1,2

1. 新能源电力系统国家重点实验室（华北电力大学），北京 102206;
2. 华电（烟台）功率半导体技术研究院有限公司，山东烟台 264010

收稿日期:2020-05-18 修回日期:2020-10-19 发布日期:2020-12-16
作者简介:王延浩(1996—)，男，硕士研究生，从事电力电子器件高温可靠性和封装技术研究，E-mail：wyh18800107889@163.com;邓二平(1989—)，男，通信作者，博士，从事电力系统用高压大功率压接型IGBT器件封装技术及可靠性研究，E-mail：dengerpinghit@163.com;黄永章(1962—)，男，博士，教授，从事电力电子器件封装和可靠性、新能源并网新方法、电动汽车等研究，E-mail：huang_y_z@ncepu.edu.cn
基金资助:
国家自然科学基金资助项目（52007061）；中央高校基本科研专项资金（2019MS001）

A Review of Reverse Bias Test for Power Device in High Temperature, High Humidity and High Voltage Conditions

WANG YanHao¹, DENG Erping^1,2, HUANG Yongzhang^1,2

1. State Key Laboratory of Alternate Electrical Power System with Renewable Eenergy Sources (North China Electric Power University), Beijing 102206, China;
2. NCEPU(Yantai) Power Semiconductor Technology Research Institute Co., Ltd., Yantai 264010, China

Received:2020-05-18 Revised:2020-10-19 Published:2020-12-16
Supported by:
This work is supported by National Natural Science Foundation of China (No.52007061), Fundamental Research Funds for the Central Universities (No.2019MS001)

摘要/Abstract

摘要： 户外工况下，功率器件寿命受高湿环境中的水汽侵蚀缩短。用于考核湿度可靠性的传统高温高湿反偏测试最大值80V偏压已不能满足高压大功率器件加速老化测试需求，高温高湿高压反偏测试（high-voltage high humidity high temperature reverse bias test, HV-H3TRB）近年来得以开展。然而，相关研究进展慢、存在的关键问题不明等使得研究发展方向不甚明朗。首先从基本原理出发，详细论述水汽侵入功率器件、腐蚀芯片表面的机理。进一步地，针对研究对象与方法、器件失效分析、电气量老化特征等3个方面对已有研究现状进行论述与总结。最后，根据老化前后器件结构变化，总结芯片层终端、钝化层、封装材料的抗湿优化设计，并指出相关研究后续发展方向。

关键词: 功率器件, 高温高湿高压反偏测试, 失效分析, 钝化层, 封装材料

Abstract: In outdoor working conditions, the lifespan of power device would be shortened by moisture invasion and erosion of the high humidity environment. The maximum 80 V bias of traditional high humidity high temperature reverse bias test (H3TRB), which is used to assess the reliability under humid environment, cannot meet the demand of high voltage high power device accelerated aging test, thus the high-voltage high humidity high temperature reverse bias test (HV-H3TRB) has been carried out in recent years. However, both the research progress and the key problems are unclear, which turns to the research development direction unclear. In this paper, the mechanism of moisture invasion into power device and the mechanism of moisture corrosion on chip surface are discussed in detail. Then, the existing research status is discussed and summarized in terms of research object and method, device failure analysis, and electrical aging characteristics. Afterwards, according to the changes of device structure before and after aging, the optimal design of anti-moisture of chip layer terminal, passivation layer and packaging material are summarized. Finally, the future development direction of related research is pointed out.

Key words: power device, HV-H3TRB, failure analysis, passivation layer, encapsulation material

王延浩, 邓二平, 黄永章. 功率器件高温高湿高压反偏测试研究综述[J]. 中国电力, 2020, 53(12): 18-29.

WANG YanHao, DENG Erping, HUANG Yongzhang. A Review of Reverse Bias Test for Power Device in High Temperature, High Humidity and High Voltage Conditions[J]. Electric Power, 2020, 53(12): 18-29.

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功率器件高温高湿高压反偏测试研究综述

A Review of Reverse Bias Test for Power Device in High Temperature, High Humidity and High Voltage Conditions

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