Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices

doi:10.11930/j.issn.1004-9649.202210121

Abstract

Abstract: High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy. The reliability of IGBT and thyristor has become a key problem for the stable and reliable operation of electrical equipment and even the entire power system. Firstly, starting from the traditional packaging structure of press-pack devices, this paper introduces the spring multi-chip packaging and convex multi-chip/single-chip packaging of press-pack devices, and compares the performance of three packaging structures. Then, the package-level failure mode and mechanism of press-pack devices are investigated, and the results show that the mismatch of the thermal expansion coefficient is the main reason for package-level failure. At the same time, the chip-level failures of IGBT and thyristor are also investigated, and it is found that electrical overstress is the main reason for chip-level failures. Thirdly, the new packaging structure and technology of press-pack devices are briefly introduced. Finally, future research focus on press-pack devices are discussed.

Key words: press-pack device, IGBT, thyristor, failure mode and mechanism, packaging structure

LUO Haoze, CHEN Zhong, YANG Wei, XIE Jia, HU Di, GUAN Weiping. Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices[J]. Electric Power, 2023, 56(5): 137-152.

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URL: https://www.electricpower.com.cn/EN/10.11930/j.issn.1004-9649.202210121

https://www.electricpower.com.cn/EN/Y2023/V56/I5/137

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