Electric Power ›› 2020, Vol. 53 ›› Issue (12): 18-29.DOI: 10.11930/j.issn.1004-9649.202005133

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A Review of Reverse Bias Test for Power Device in High Temperature, High Humidity and High Voltage Conditions

WANG YanHao1, DENG Erping1,2, HUANG Yongzhang1,2   

  1. 1. State Key Laboratory of Alternate Electrical Power System with Renewable Eenergy Sources (North China Electric Power University), Beijing 102206, China;
    2. NCEPU(Yantai) Power Semiconductor Technology Research Institute Co., Ltd., Yantai 264010, China
  • Received:2020-05-18 Revised:2020-10-19 Published:2020-12-16
  • Supported by:
    This work is supported by National Natural Science Foundation of China (No.52007061), Fundamental Research Funds for the Central Universities (No.2019MS001)

Abstract: In outdoor working conditions, the lifespan of power device would be shortened by moisture invasion and erosion of the high humidity environment. The maximum 80 V bias of traditional high humidity high temperature reverse bias test (H3TRB), which is used to assess the reliability under humid environment, cannot meet the demand of high voltage high power device accelerated aging test, thus the high-voltage high humidity high temperature reverse bias test (HV-H3TRB) has been carried out in recent years. However, both the research progress and the key problems are unclear, which turns to the research development direction unclear. In this paper, the mechanism of moisture invasion into power device and the mechanism of moisture corrosion on chip surface are discussed in detail. Then, the existing research status is discussed and summarized in terms of research object and method, device failure analysis, and electrical aging characteristics. Afterwards, according to the changes of device structure before and after aging, the optimal design of anti-moisture of chip layer terminal, passivation layer and packaging material are summarized. Finally, the future development direction of related research is pointed out.

Key words: power device, HV-H3TRB, failure analysis, passivation layer, encapsulation material