中国电力 ›› 2020, Vol. 53 ›› Issue (12): 55-61,74.DOI: 10.11930/j.issn.1004-9649.202007137

• 国家“十三五”智能电网重大专项专栏:(三 ) 高压大功率 IGBT 及应用技术专栏 • 上一篇    下一篇

IGBT模块的热设计概述

刘国友1, 王彦刚1,2,3, 罗海辉1,2, 齐放2, 李想1,3, 吴义伯1,2   

  1. 1. 新型功率半导体器件国家重点实验室,湖南 株洲 412001;
    2. 株洲中车时代电气半导体有限公司,湖南 株洲 412001;
    3. Dynex半导体有限公司,林肯 LN6 3LF
  • 收稿日期:2020-07-28 修回日期:2020-10-14 发布日期:2020-12-16
  • 作者简介:刘国友(1966—),男,博士,高级工程师(教授级),从事功率半导体及其应用研究,E-mail:liugy@csrzic.com;王彦刚(1974—),男,博士,高级工程师(教授级),从事功率半导体器件研究与开发,E-mail:yangang_wang@dynexsemi.com;罗海辉(1982—),男,博士,高级工程师(教授级),从事功率半导体设计与工艺研究,E-mail:luohh@csrzic.com
  • 基金资助:
    国家重点研发计划资助项目(2017YFB01023,2017YFB0102303)

A Review of Thermal Design for IGBT Module

LIU Guoyou1, WANG Yangang1,2,3, LUO Haihui1,2, QI Fang2, LI Xiang1,3, WU Yibo1,2   

  1. 1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, 412001, China;
    2. Zhuzhou CRRC Times Electric Semiconductor Co., Ltd., Zhuzhou, 412001, China;
    3. Dynex Semiconductor Co., Ltd., Lincoln LN6 3LF, UK
  • Received:2020-07-28 Revised:2020-10-14 Published:2020-12-16
  • Supported by:
    This work is supported by National Key R&D Program of China (No.2017YFB01023, No.2017YFB0102303)

摘要: 对IGBT模块的热特性和热设计进行概述,介绍IGBT模块的热阻抗网络模型及其与封装材料热性能及尺寸的关系;从芯片和模块封装材料、结构等方面讨论模块的热设计要点,并阐述传统IGBT模块及新型压接式IGBT模块的热设计。

关键词: IGBT模块, 热设计, 可靠性

Abstract: In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed. Then, the thermal design of IGBT module is investigated in terms of semiconductor chip, packaging structure and material. Finally, the main thermal design aspects of conventional IGBT module and new press-pack IGBT module are presented.

Key words: IGBT module, thermal design, reliability