大功率压接型IGBT器件中的机械应力研究

doi:10.11930/j.issn.1004-9649.202005029

中国电力 ›› 2020, Vol. 53 ›› Issue (12): 62-74.DOI: 10.11930/j.issn.1004-9649.202005029

• 国家“十三五”智能电网重大专项专栏：（三 ) 高压大功率 IGBT 及应用技术专栏 • 上一篇下一篇

大功率压接型IGBT器件中的机械应力研究

唐新灵¹, 林仲康¹, 张西子¹, 燕树民², 苏冰², 王亮¹, 韩荣刚¹, 石浩¹

1. 先进输电技术国家重点实验室（全球能源互联网研究院有限公司），北京 102209;
2. 国网山东省电力公司德州供电公司，山东德州 253000

收稿日期:2020-05-06 修回日期:2020-08-18 发布日期:2020-12-16
作者简介:唐新灵(1988—)，男，博士，工程师，从事高压大功率压接型IGBT器件封装设计及测试技术研究，E-mail：18817555671@126.com;林仲康(1989—)，男，硕士，工程师，从事功率半导体器件结构设计与仿真技术研究，E-mail：lzk007x@163.com;张西子(1991—)，女，通信作者，硕士，工程师，从事硅基与碳化硅半导体器件的电场仿真与绝缘设计研究，E-mail：xizihappyeveryday@qq.com
基金资助:
国家电网公司科技项目(高加速应力条件下Si基芯片终端结构及其封装结构对器件耐压可靠性的影响机制，5455GB190009)

Mechanical Stress Analysis in High Power Press Pack IGBT

TANG Xinling¹, LIN Zhongkang¹, ZHANG Xizi¹, YAN Shumin², SU Bing², WANG Liang¹, HAN Ronggang¹, SHI Hao¹

1. State Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Research Institute Co., Ltd.), Beijing 102209, China;
2. Dezhou Electric Power Supply Company, State Grid Shandong Electric Power Company, Dezhou 253000, China

Received:2020-05-06 Revised:2020-08-18 Published:2020-12-16
Supported by:
This work is supported by Science and Technology Project of SGCC (Influence Mechanism of Si-based Chip Terminal Structure and its Packaging Structure on Device Withstand Voltage Reliability under High Accelerated Stress, No.5455GB190009)

摘要/Abstract

摘要： 机械应力是影响高压大功率压接型IGBT器件电气特性、热特性以及可靠性的关键因素之一。首先，从芯片与封装结构设计的角度，介绍单芯片以及多芯片并联机械压力分布均衡特性的研究现状及其关键设计技术。其次，从封装工艺的角度，分别对比弹性压接、刚性压接等不同焊接形式对芯片机械应力分布的影响规律。最后，结合压接封装结构特点，基于一种新型芯片终端结构，提出一种新型封装技术方案，可以有效提升单芯片以及并联芯片压力的均衡特性，为高压大容量压接型IGBT器件的设计提供参考依据。

关键词: IGBT, 压接型IGBT, 机械应力, 双面终端

Abstract: Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices. First of all, in this paper, from the perspective of chip and package structure design, the research status and key design techniques of the uniformity of the mechanical pressure distribution of single-chip and parallel multi-chip are introduced. Secondly, from the perspective of packaging technology, the influence of compliant contact, rigid contact and different soldering forms on the mechanical stress distribution of the chips are compared. Finally, combined with the characteristics of the press-pack structure, and based on a new type of edge termination structure, a new packaging technology solution is proposed, which can effectively improve the uniformity of the pressure of single chips and parallel chips, so as to provide a reference for the design of high-voltage high-power press-pack IGBT devices.

Key words: IGBT, press pack IGBT, mechanical stress, double-side edge termination

唐新灵, 林仲康, 张西子, 燕树民, 苏冰, 王亮, 韩荣刚, 石浩. 大功率压接型IGBT器件中的机械应力研究[J]. 中国电力, 2020, 53(12): 62-74.

TANG Xinling, LIN Zhongkang, ZHANG Xizi, YAN Shumin, SU Bing, WANG Liang, HAN Ronggang, SHI Hao. Mechanical Stress Analysis in High Power Press Pack IGBT[J]. Electric Power, 2020, 53(12): 62-74.

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