计及内部材料疲劳的压接型IGBT器件 可靠性建模与分析

doi:10.11930/j.issn.1004-9649.201907077

中国电力 ›› 2019, Vol. 52 ›› Issue (9): 30-37.DOI: 10.11930/j.issn.1004-9649.201907077

• 电力电子器件可靠性专栏 • 上一篇下一篇

计及内部材料疲劳的压接型IGBT器件可靠性建模与分析

李辉¹, 王晓¹, 姚然¹, 龙海洋¹, 李金元², 李尧圣²

1. 重庆大学输配电装备及系统安全与新技术国家重点实验室, 重庆 400044;
2. 全球能源互联网研究院有限公司先进输电技术国家重点实验室, 北京 102209

收稿日期:2019-07-09 修回日期:2019-08-12 出版日期:2019-09-05 发布日期:2019-09-19
作者简介:李辉(1973-),男,博士,教授,从事风力发电技术、电力电子器件可靠性、电机及其系统控制的研究,E-mail:cqulh@163.com;王晓(1995-),男,博士研究生,从事电力电子器件可靠性研究,E-mail:cqushawnwong@foxmail.com
基金资助:
国家重点研发计划资助项目（2016YFB0901804）。

Reliability Modeling and Analysis of Press-Pack IGBTs Considering Internal Material Fatigue

LI Hui¹, WANG Xiao¹, YAO Ran¹, LONG Haiyang¹, LI Jinyuan², LI Yaosheng²

1. State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China;
2. State Key Laboratory of Advanced Transmission Technology, Global Energy Interconnection Research Institute Co., Ltd., Beijing 102209, China

Received:2019-07-09 Revised:2019-08-12 Online:2019-09-05 Published:2019-09-19
Supported by:
This work is supported by National Key R & D Program of China (No.2016YFB0901804).

摘要/Abstract

摘要： 大功率压接型IGBT器件更适合柔性直流输电装备应用工况，必然对压接型绝缘栅极晶体管（IGBT）器件可靠性评估提出要求。提出计及内部材料疲劳的压接型IGBT器件可靠性建模方法，首先，建立单芯片压接型IGBT器件电-热-机械多物理场仿真模型，通过实验验证IGBT仿真模型的有效性；其次，考虑器件内部各层材料的疲劳寿命，建立单芯片压接型IGBT器件可靠性模型，分析了单芯片器件各层材料薄弱点；最后针对多芯片压接型IGBT器件实际结构，建立多芯片压接型IGBT器件多物理场仿真模型，分析器件应力分布，并对各芯片及多芯片器件故障率进行计算。结果表明，压接型IGBT器件内部的温度、von Mises 应力分布不均，最大值分别位于IGBT芯片和发射极钼层接触的轮廓线边缘；多芯片器件内应力分布不均会导致各芯片可靠性有所差异，边角位置处芯片表面应力最大，可靠性最低。

关键词: 压接型IGBT器件, 多物理场模型, 材料疲劳, 可靠性模型

Abstract: The high power press-pack IGBTs (Insulated Gate Bipolar Transistor) devices are more suitable for flexible HVDC high power system. It is inevitable to meet the requirements for reliability evaluation of press-pack IGBTs. In this paper, a reliability modeling of press-pack IGBTs considering material fatigue is proposed. Firstly, the electro-thermal-mechanical multi-physics simulation model of single-chip press-pack IGBT device is established and the effectiveness of the IGBT simulation model is verified by experiments. Secondly, the reliability model of single-chip press-pack IGBT device is established considering the fatigue life of materials and the weak points of each layer of single-chip device are analyzed. Finally, the multi-physics simulation model of multi-chip press-pack IGBTs is established based on the actual structure. The stress distribution of the devices is analyzed, and the failure rates of each chip and multi-chip devices are calculated. The results show that the temperature and von Mises stress distribution inside the press-pack IGBTs are uneven. The maximum values are located at the edge of the contour of the contact between the IGBT chip and the emitter molybdenum layer. The chip current, temperature and thermal-mechanical stress distribution are uneven in the multi-chip device. The reliability level of the internal chip is obviously different because of uneven stress distribution in multi-chip devices. The chip at the corner of the device bears the maximum stress and the reliability is the lowest.

Key words: press-pack IGBTs, multiphysics model, material fatigue, reliability model

中图分类号:

TM721.1
TM46

李辉, 王晓, 姚然, 龙海洋, 李金元, 李尧圣. 计及内部材料疲劳的压接型IGBT器件可靠性建模与分析[J]. 中国电力, 2019, 52(9): 30-37.

LI Hui, WANG Xiao, YAO Ran, LONG Haiyang, LI Jinyuan, LI Yaosheng. Reliability Modeling and Analysis of Press-Pack IGBTs Considering Internal Material Fatigue[J]. Electric Power, 2019, 52(9): 30-37.

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参考文献

[1] 赵东元, 刘江. 压接型IGBT在电力系统电力电子领域的应用分析[C]//第五届电能质量及柔性输电技术研讨会论文集. 2014:296−299.
ZHAO Dongyuan, LIU Jiang. Application analysis of the press-pack IGBT in the power electronic field of power system[C]//Proceedings of the Fifth Symposium on Power Quality and Flexible Transmission Technology, 2014:296-299.
[2] GUNTURI S, SCHNEIDER D. On the operation of a press pack IGBT module under short circuit conditions[J]. IEEE Transactions on Advanced Packaging, 2006, 29(3):433-440.
[3] SIMPSON R, PLUMPTON A, VARLEY M, et al. Press-pack IGBTs for HVDC and FACTs[J]. CSEE Journal of Power & Energy Systems, 2017, 3(3):302-310.
[4] EICHER S, RAHIMO M, TSYPLAKOV E, et al. 4.5 kV press pack IGBT designed for ruggedness and reliability[C]//Industry Applications Conference, 2004.
[5] BENAVIDES N D, MCCOY T J, CHRIN M A. Reliability improvements in integrated power systems with pressure contact semiconductors[C]. American Society of Naval Engineers, 2009.
[6] 邓二平, 赵志斌, 张朋, 等. 压接型IGBT器件内部压力分布[J]. 电工技术学报, 2017, 32(6):201-208
DENG Erping, ZHAO Zhibin, ZHANG Peng, et al. Internal pressure distribution of crimp IGBT devices[J]. Transactions of Electrical Engineering, 2017, 32(6):201-208
[7] DENG E, ZHAO Z, LIN Z, et al. Influence of temperature on the pressure distribution within press pack IGBTs[J]. IEEE Transactions on Power Electronics, 2017(99):1-1.
[8] 潘艳, 李金元, 李尧圣, 等. 柔直换流阀用压接式IGBT器件物理场建模及内部压强分析[J]. 电力自动化设备, 2019, 39(1):40-45
PAN Yan, LI Jinyuan, LI Yaosheng, et al. Physical field modeling and internal pressure analysis of press-pack IGBT device based VSC-HVDC converter[J]. Electric Power Automation Equipment, 2019, 39(1):40-45
[9] TINSCHERT L, ÅRDAL A R, POLLER T, et al. Possible failure modes in press-pack IGBTs[J]. Microelectronics Reliability, 2015, 55(6):903-911.
[10] 赵志斌, 邓二平, 张朋, 等. 换流阀用与直流断路器用压接型IGBT器件差异分析[J]. 电工技术学报, 2017(19):129-137
ZHAO Zhibin, DENG Erping, ZHANG Peng, et al. Difference analysis of crimp-type IGBT devices for converter valves and DC circuit breakers[J]. Transactions of China Electrotechnical Society, 2017(19):129-137
[11] 窦泽春, 刘国友, 陈俊, 等. 大功率压接式IGBT器件设计与关键技术[J]. 大功率变流技术, 2016(2):21-25
DOU Zechun, LIU Guoyou, CHEN Jun, et al. Design and key technologies of high power crimp IGBT devices[J]. High Power Converter Technology, 2016(2):21-25
[12] HANSEN P, MCCLUSKEY P. Failure models in power device interconnects[C]//European Conference on Power Electronics & Applications. IEEE, 2008.
[13] 张经纬, 邓二平, 赵志斌, 等. 压接型IGBT器件单芯片子模组疲劳失效的仿真[J]. 电工技术学报, 2018, 33(18):101-109
ZHANG Jingwei, DENG Erping, ZHAO Zhibin, et al. Simulation of fatigue failure of single-chip sub-modules of crimp-type IGBT devices[J]. Transactions of China Electrotechnical Society, 2018, 33(18):101-109
[14] CHEN Xiangyu. Research about thermal fatigue characteristic of IGBT module in considering of electro-thermal-mechanism coupling and crack[J]. Smart Grid, 2017, 7(6):443-451.
[15] 王永廉, 马景槐. 工程力学[M]. 北京:机械工业出版社, 2014.
[16] 苗恩铭, 费业泰, 赵静. 温度、热量与热变形的关系及计算方法研究[J]. 工具技术, 2003, 37(7):19-21
MIAO Enming, FEI Yetai, ZHAO Jing. Research on relationship between temperature, heat and thermal deformation and calculating method[J]. Tool Engineering, 2003, 37(7):19-21
[17] 邓吉利. 柔性直流换流阀压接式IGBT器件可靠性建模与评估[D]. 重庆大学, 2018.

计及内部材料疲劳的压接型IGBT器件可靠性建模与分析

Reliability Modeling and Analysis of Press-Pack IGBTs Considering Internal Material Fatigue

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