多芯片并联压接式IGBT中温度不均对电流分布的影响

doi:10.11930/j.issn.1004-9649.202004065

中国电力 ›› 2020, Vol. 53 ›› Issue (12): 10-17.DOI: 10.11930/j.issn.1004-9649.202004065

• 国家“十三五”智能电网重大专项专栏：（三 ) 高压大功率 IGBT 及应用技术专栏 • 上一篇下一篇

多芯片并联压接式IGBT中温度不均对电流分布的影响

邓真宇¹, 陈民铀¹, 赖伟¹, 李辉¹, 王晓¹, 李金元², 杜耀婷³

1. 重庆大学电气工程学院, 重庆 400044;
2. 全球能源互联网研究院有限公司, 北京 102206;
3. 国网重庆市电力公司南岸供电分公司, 重庆 400060

收稿日期:2020-04-10 修回日期:2020-09-25 发布日期:2020-12-16
作者简介:邓真宇(1993—)，男，硕士研究生，从事电力电子器件可靠性和状态监测研究，E-mail：zhenyu.deng@outlook.com;赖伟(1986—)，男，通信作者，博士，副教授，从事电力电子器件可靠性寿命建模和状态监测研究，E-mail：laiweicqu@126.com
基金资助:
国家自然科学基金资助项目(51707024)：国家自然科学基金-国家电网公司联合基金重点资助项目(U1966213)

Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT

DENG Zhenyu¹, CHEN Minyou¹, LAI Wei¹, LI Hui¹, WANG Xiao¹, LI Jinyuan², DU Yaoting³

1. School of Electrical Engineering, Chongqing University, Chongqing 400044, China;
2. Global Energy Interconnection Research Institute Co., Ltd., Beijing 102209, China;
3. State Grid Chongqing Nanan Power Supply Company, Chongqing 400060, China

Received:2020-04-10 Revised:2020-09-25 Published:2020-12-16
Supported by:
This work is supported by National Natural Science Foundation of China (No.51707024) and National Natural Science Foundation of China-State Grid Corporation Joint Fund (No. U1966213)

摘要/Abstract

摘要： 多芯片并联的压接式IGBT器件是柔性直流输电设备中的关键部件，因制造工艺、回路寄生参数和热耦合问题使得器件内部应力分布不均，造成器件不均匀老化，使得内部温度不均程度加剧，进而使得电流分配不均。围绕不同温度差异下导致的电流分布不均问题展开研究。首先，对造成IGBT器件并联不均流的原因以及温度对不均流特性的作用进行分析。然后，利用单芯片压接式IGBT器件并联模拟多芯片器件内部的温度分布不均情况，进行温度分布不均匀程度对电流分配影响的实验。最后，通过实验验证并联器件间温度差异与不均流程度的关系。所提方法为提高器件的运行可靠性和对压接式IGBT失效机理认知奠定基础。

关键词: 压接式IGBT, 温度分布, 电流分布, 并联, 均流

Abstract: The multi-chip parallel press pack IGBT device is a key component in flexible DC transmission equipment. Due to manufacturing processes, loop parasitic parameters and thermal coupling, the internal stress distribution of the device is imbalance, resulting in uneven aging of the device, the temperature distribution uneven, and the current distribution imbalance. This paper focuses on the problem of uneven current distribution caused by different temperature imbalance. First, the causes of uneven current sharing of IGBT devices and the effect of temperature on the uneven current characteristics are analyzed. Then, the single-chip press pack IGBT devices are used in parallel to simulate the effect of the uneven temperature distribution which is used for the experiment about the effect of temperature imbalance degree on the current distribution of the multi-chip devices. Finally, the relationship between the temperature difference and the degree of current imbalance is verified by experiment. It lays a scientific and technical foundation for improving the operational reliability of the device and cognizing the failure mechanism of the press pack IGBT.

Key words: press pack IGBT, temperature distribution, current distribution, parallel, current balance

邓真宇, 陈民铀, 赖伟, 李辉, 王晓, 李金元, 杜耀婷. 多芯片并联压接式IGBT中温度不均对电流分布的影响[J]. 中国电力, 2020, 53(12): 10-17.

DENG Zhenyu, CHEN Minyou, LAI Wei, LI Hui, WANG Xiao, LI Jinyuan, DU Yaoting. Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT[J]. Electric Power, 2020, 53(12): 10-17.

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多芯片并联压接式IGBT中温度不均对电流分布的影响

Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT

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