Electric Power ›› 2019, Vol. 52 ›› Issue (9): 20-29.DOI: 10.11930/j.issn.1004-9649.201907122

Previous Articles     Next Articles

Current-sharing Design of Press-Pack IGBT

LIU Guoyou1,2, DOU Zechun1,3, LUO Haihui1,2, QIN Rongzhen1,2, WANG Yangang1,2   

  1. 1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou 412001, China;
    2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou 412001, China;
    3. CRRC Zhuzhou Institute Co., Ltd., Zhuzhou 412001, China
  • Received:2019-07-15 Revised:2019-07-22 Online:2019-09-05 Published:2019-09-19

Abstract: Aiming at the inner design of the press-pack IGBT devices, this paper focuses on the study and optimal design of these issues, such as multi-chip pressure contact and its pressure balancing, internal current-sharing and current balancing among sub-units. Testing results showed that the developed press-pack IGBT devices has promising capabilities of current turn-off, short-circuit current and RBSOA, which indicates their good ability of inner current sharing.

Key words: current-sharing, press-pack, IGBT, design

CLC Number: