封装寄生参数对并联IGBT芯片瞬态电流分布的影响规律

doi:10.11930/j.issn.1004-9649.201805131

中国电力 ›› 2019, Vol. 52 ›› Issue (8): 16-25.DOI: 10.11930/j.issn.1004-9649.201805131

封装寄生参数对并联IGBT芯片瞬态电流分布的影响规律

石浩¹, 吴鹏飞¹, 唐新灵¹, 董建军², 韩荣刚¹, 张朋¹

1. 全球能源互联网研究院有限公司, 北京 102209;
2. 国网山西省电力公司晋城供电公司, 山西晋城 033000

收稿日期:2018-05-22 修回日期:2018-11-19 发布日期:2019-08-14
作者简介:石浩(1984-),男,工程师,从事高压大功率压接型IGBT器件封装技术研究,E-mail:docent@163.com;吴鹏飞(1986-),男,工程师,从事柔性直流输电用大功率半导体器件测试技术研究,E-mail:wupengfei@geiri.sgcc.com.cn
基金资助:
国家科技重大专项集成电路专项资助项目（2015ZX02301），国家电网公司科技项目（GEIRI-GB-71-17-001）。

Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips

SHI Hao¹, WU Pengfei¹, TANG Xinling¹, DONG Jianjun², HAN Ronggang¹, ZHANG Peng¹

1. Global Energy Interconnection Research Institute Co. Ltd., Beijing 102209, China;
2. State Grid Jincheng Electric Power Supply Company, Jincheng 033000, China

Received:2018-05-22 Revised:2018-11-19 Published:2019-08-14
Supported by:
This work is supported by National Science and Technology Major Project (No.2015ZX02301), Science and Technology Projects of SGCC (No.GEIRI-GB-71-17-001).

摘要/Abstract

摘要： 大功率IGBT器件通过并联多个IGBT芯片来获得大电流等级，并联芯片动静态电流分布的一致性对于提高器件电流等级以及可靠性至关重要。首先介绍了大功率IGBT模块内部布局不一致导致的封装寄生参数差异性。其次，结合IGBT等效电路模型及其开关特性，分析了寄生参数差异性对于并联IGBT芯片瞬态电流分布特性的影响规律。最后，建立了并联IGBT芯片的等效电路模型，并应用Synopsys Saber软件建立了仿真电路，从封装寄生电感参数差异性、封装寄生电阻参数差异性，分析了参数差异对并联芯片的瞬态电流分布特性的影响。

关键词: IGBT, 并联芯片, 寄生电感, 寄生电阻, 瞬态电流分布

Abstract: High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the difference of package parasitic parameters caused by inconsistent internal layout of paralleled IGBT chips is introduced in this paper. Secondly, combined with the equivalent circuit model of IGBT and its switching characteristics, the influence of parasitic parameters on the transient current distribution characteristics of parallel IGBT chips is analyzed. Then, the equivalent circuit model of parallel IGBT chip is established, and the simulation circuit is built by Synopsys Saber software. From the differences of package parasitic inductance parameters and package parasitic resistance parameters, the influence of parameters differences on the transient current distribution characteristics of parallel chip is analyzed. In this paper, the influence of various package parasitic parameters on the transient current distribution is considered comprehensively, which is of great significance for optimizing the transient current consistency of multi-chip parallel connection.

Key words: IGBT, parallel chips, parasitic inductance, parasitic resistance, transient current distribution

中图分类号:

TM152

石浩, 吴鹏飞, 唐新灵, 董建军, 韩荣刚, 张朋. 封装寄生参数对并联IGBT芯片瞬态电流分布的影响规律[J]. 中国电力, 2019, 52(8): 16-25.

SHI Hao, WU Pengfei, TANG Xinling, DONG Jianjun, HAN Ronggang, ZHANG Peng. Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips[J]. Electric Power, 2019, 52(8): 16-25.

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封装寄生参数对并联IGBT芯片瞬态电流分布的影响规律

Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips

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封装寄生参数对并联IGBT芯片瞬态电流分布的影响规律

Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips

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