不同结构压接型IGBT器件压力分布对比

doi:10.11930/j.issn.1004-9649.201906024

中国电力 ›› 2019, Vol. 52 ›› Issue (9): 11-19,29.DOI: 10.11930/j.issn.1004-9649.201906024

• 电力电子器件可靠性专栏 • 上一篇下一篇

不同结构压接型IGBT器件压力分布对比

李安琦, 邓二平, 任斌, 赵雨山, 赵志斌, 黄永章

华北电力大学新能源电力系统国家重点实验室, 北京 102206

收稿日期:2019-06-06 修回日期:2019-07-15 出版日期:2019-09-05 发布日期:2019-09-19
通讯作者: 邓二平(1989-),男,通信作者,博士,讲师,从事电力系统用高压大功率压接型IGBT器件封装技术及可靠性研究,E-mail:dengerpinghit@163.com
作者简介:李安琦(1995-),女,硕士研究生,从事压接型IGBT器件封装特性研究,E-mail:sumer951112@163.com;任斌(1994-),男,硕士研究生,从事压接型IGBT器件功率循环寿命研究,E-mail:1624352537@qq.com;赵雨山(1993-),男,硕士研究生,从事电力电动汽车用IGBT模块功率循环测试研究,E-mail:15958164074@163.com;赵志斌(1977-),男,博士,教授,从事大功率半导体器件及应用研究,E-mail:zhibinzhao@126.com;黄永章(1962-),男,博士,教授,从事高压大功率IGBT器件工艺、封装技术、联合仿真和电力电子器件在新能源电力系统的应用研究,E-mail:huang_y_z@ncepu.edu.cn
基金资助:
国家自然科学基金委员会-国家电网公司智能电网联合基金资助项目（U1766219）；中央高校基本科研业务费专项资金资助项目（2019MS001）。

Comparison of Clamping Force Distribution within Press-Pack IGBTs of Different Structures

LI Anqi, DENG Erping, REN Bin, ZHAO Yushan, ZHAO Zhibin, HUANG Yongzhang

State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China

Received:2019-06-06 Revised:2019-07-15 Online:2019-09-05 Published:2019-09-19
Supported by:
This work is supported by Smart Grid Joint Fund of National Natural Science Foundation Committee-State Grid Corporation (No.U1766219) and the Fundamental Research Funds for the Central Universities (No.2019MS001).

摘要/Abstract

摘要： 柔性直流输电技术的不断发展对应用在柔性直流输电系统中的绝缘栅双极晶体管（IGBT）器件提出了更多的要求。压接型IGBT器件因符合柔性直流输电系统等领域高电压、大电流以及高功率密度的发展需求而得到重视，易于串联的特性使其非常适用于高压应用领域。目前以WESTCODE、TOSHIBA公司为代表的凸台式封装结构和以ABB公司为代表的弹簧式封装结构的2种压接型IGBT器件已成功应用到柔性直流输电工程中。基于有限元法建立了2种压接型IGBT器件的仿真模型，分别针对器件2种不同工况（正常加压未工作和正常工作状态）对比分析了其内部的压力分布。仿真结果表明，2种结构的压接型IGBT器件在正常加压状态下压力分布均比较均匀，由于弹簧结构的存在使得弹簧式压接型IGBT器件在正常工作状态下压力分布更为均匀。最后基于仿真分析，对压接型IGBT器件的结构优化提出了可能的解决方案。

关键词: 柔性直流输电, 压接型IGBT器件, 凸台式压接型IGBT器件, 弹簧式压接型IGBT器件, 压力分布

Abstract: The continuous development of flexible High Voltage Direct Current (HVDC) transmission system poses more requirements to the insulated gate bipolar transistor (IGBT) devices. Press Pack IGBTs (PPI) are valued for their development demand of high voltage, high current and high power in the areas of flexible HVDC transmission system. At present, two types of Press Pack IGBTs with pedestal structure represented by WESTCODE and TOSHIBA as well as Stakpak structure represented by ABB, have been successfully applied in the flexible HVDC transmission projects. These two kinds of structural models of the Press Pack IGBTs based on finite element method are established. The pressure distributions within these two kinds of Press-Pack IGBTs in normal pressurization conditions and normal working conditions are analyzed. The simulation results show that the pressure distributions within both types of Press-Pack IGBTs in normal pressurization conditions are relatively uniform, while the pressure distribution of the stakpak structure is more uniform in normal working conditions. Finally, based on the simulation results, this paper proposes possible solutions to the structural optimization of the Press Pack IGBTs.

Key words: flexible HVDC transmission system, press pack IGBTs, pedestal PPI, stakpak PPI, clamping force distribution

中图分类号:

TN302

李安琦, 邓二平, 任斌, 赵雨山, 赵志斌, 黄永章. 不同结构压接型IGBT器件压力分布对比[J]. 中国电力, 2019, 52(9): 11-19,29.

LI Anqi, DENG Erping, REN Bin, ZHAO Yushan, ZHAO Zhibin, HUANG Yongzhang. Comparison of Clamping Force Distribution within Press-Pack IGBTs of Different Structures[J]. Electric Power, 2019, 52(9): 11-19,29.

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不同结构压接型IGBT器件压力分布对比

Comparison of Clamping Force Distribution within Press-Pack IGBTs of Different Structures

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不同结构压接型IGBT器件压力分布对比

Comparison of Clamping Force Distribution within Press-Pack IGBTs of Different Structures

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