High Resistance Grounding Fault Perception and Identification Method in Asymmetric Distribution Network

doi:10.11930/j.issn.1004-9649.202406070

Abstract

Abstract:

Aiming at the problems of fault perception and identification in high resistance grounding fault of distribution network, a high resistance grounding fault perception method for parameter-asymmetric distribution network based on damping rate variation is proposed. In this method, the zero-sequence voltage is actively regulated by the active inverter device for a short time, and the fault is judged according to the variation of the system damping rate before and after fault. On the basis of realizing the sensitive perception of high resistance grounding fault, a fault type identification method based on the change characteristics of zero-sequence equivalent admittance phase angle of the system is further proposed. This identification method actively changes the zero-sequence voltage amplitude regulation coefficient, and accurately identifies the transient and permanent grounding fault types according to the change trajectory of admittance phase angle under different grounding modes. The simulation analysis shows that the proposed method can be applied to the three-phase parameter asymmetric distribution network. The proposed method can realize fault perception and identification in low and high resistance grounding faults under different operation modes, and has strong resistance to transition resistance and strong applicability.

Key words: high resistance grounding fault, zero-sequence voltage, fault perception, fault identification

Penghui YANG, Guochao QIAN, Hao BAI, Hongwen LIU, Wanxian YANG, Xiao SHI. High Resistance Grounding Fault Perception and Identification Method in Asymmetric Distribution Network[J]. Electric Power, 2025, 58(2): 22-32.

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URL: https://www.electricpower.com.cn/EN/10.11930/j.issn.1004-9649.202406070

https://www.electricpower.com.cn/EN/Y2025/V58/I2/22

Figures/Tables 14

References 25

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系统对地电导${G_\Sigma }$/S		系统对地电容${C_\Sigma }$/μF		不对称度$\rho $/%		消弧线圈电感$L$/H
2.5×10^–4		30		1		0.322

系统对地电导${G_\Sigma }$/S		系统对地电容${C_\Sigma }$/μF		不对称度$\rho $/%		消弧线圈电感$L$/H
2.5×10^–4		30		1		0.322

系统仿真参数		数值
相对地泄露电阻/kΩ	R_A	314.136
	R_B	325.262
	R_C	309.858
相对地电容/μF	C_A	0.51
	C_B	0.40
	C_C	0.61
消弧线圈电感/H	L	6.060

系统仿真参数		数值
相对地泄露电阻/kΩ	R_A	314.136
	R_B	325.262
	R_C	309.858
相对地电容/μF	C_A	0.51
	C_B	0.40
	C_C	0.61
消弧线圈电感/H	L	6.060

${R_{\text{f}}}$/Ω	${\dot U_{01}}$/V	${\dot U_{02}}$/V	${\dot I_{{\text{in}}}}$/A
∞	38.93∠147.70°	866.03∠0°	0.43∠87.53°
10	5773.05∠–150.27°	866.03∠0°	653.34∠26.24°
100	5763.09∠–152.72°	866.03∠0°	65.58∠26.53°
1000	5184.43∠–175.23°	866.03∠0°	6.75∠29.40°
5000	2245.59∠–144.11°	866.03∠0°	1.56∠40.17°
16000	781.10∠–129.87°	866.03∠0°	0.72∠57.70°