R&D of 3 300V SiC MOSFET With Embedded SBD

doi:10.11930/j.issn.1004-9649.202107055

Electric Power ›› 2021, Vol. 54 ›› Issue (12): 81-85,93.DOI: 10.11930/j.issn.1004-9649.202107055

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R&D of 3 300V SiC MOSFET With Embedded SBD

LIU Guoyou^1,2, LUO Haihui^1,2, LI Chenzhan^1,2, Song Guan^1,2

1. State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou 412001, China;
2. Zhuzhou CRRC Times Semiconductor Co., Ltd., Zhuzhou 412001, China

Received:2021-07-03 Revised:2021-08-26 Online:2021-12-05 Published:2021-12-16
Supported by:
This work was supported by the National Key Research and Development Program of China (No.2016YFB0400503).

Abstract

Abstract: In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky contact. The optimized surface treatment procedure after nickel annealing is adopted to improve the leakage performance of gate-source in the chip manufacturing process, which contributes to a 58% reduction in gate-source short circuit failure rate. It is found that the switch-on voltage of parasitic diode is about 8V, when the diode current density (J_SD) reaches 100 A/cm², the voltage drop of SBD (V_SD(SBD)) is 2.1V, which indicates the effectiveness of the embedded SBD in suppressing the parasitic diode turn-on and reducing the bipolar degradation risk of MOSFET. In addition, the threshold voltage of the chip is 3.05V, and the specific on-resistance and blocking voltage are 18mΩ·cm² and 3 955V respectively, suggesting a broad application prospect in the high-voltage rail transit market.

Key words: silicon carbide, SBD, MOSFET, parasitic diode, bipolar degradation

LIU Guoyou, LUO Haihui, LI Chenzhan, Song Guan. R&D of 3 300V SiC MOSFET With Embedded SBD[J]. Electric Power, 2021, 54(12): 81-85,93.

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R&D of 3 300V SiC MOSFET With Embedded SBD

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