IGBT模块失效机理及状态监测研究综述

doi:10.11930/j.issn.1004-9649.201907034

中国电力 ›› 2019, Vol. 52 ›› Issue (9): 61-72.DOI: 10.11930/j.issn.1004-9649.201907034

• 电力电子器件可靠性专栏 • 上一篇下一篇

IGBT模块失效机理及状态监测研究综述

王希平^1,2, 丁祥宽^1,2, 姚芳^1,2, 唐圣学^1,2, 李志刚^1,2

1. 河北工业大学电气工程学院省部共建电工装备可靠性与智能化国家重点实验室天津 300130;
2. 河北工业大学电气工程学院河北省电磁场与电器可靠性重点实验室天津 300130

收稿日期:2019-07-04 修回日期:2019-07-18 出版日期:2019-09-05 发布日期:2019-09-19
通讯作者: 姚芳(1972-),女,通信作者,博士,教授,从事电器可靠性及其检测技术研究,E-mail:yaofang@hebut.edu.cn
作者简介:王希平(1980-),女,博士研究生,从事电力电子器件可靠性研究,E-mail:ndwangxiping@163.com
基金资助:
国家科技支撑计划资助项目（多种光伏系统户外测试技术研究，2015BAA09B01）；河北省自然科学基金重点项目（高压直流输电功率器件健康状态退化规律及其剩余寿命预测研究，E2017202284）；河北省自然科学基金项目（大数据驱动的新能源并网逆变器可靠性研究，E2019202481）。

Review of Failure Mechanism and State Monitoring Technology for IGBT Modules

WANG Xiping^1,2, DING Xiangkuan^1,2, YAO Fang^1,2, TANG Shengxue^1,2, LI Zhigang^1,2

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Electrical Engineering, Hebei University of Technology, Tianjin 300130;
2. Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, School of Electrical Engineering, Hebei University of Technology, Tianjin 300130

Received:2019-07-04 Revised:2019-07-18 Online:2019-09-05 Published:2019-09-19
Supported by:
This work is supported in part by National Science and Technology Support Programme of China (Study on Outdoor Testing Technology of Various Photovoltaic Systems, No. 2015BAA09B01),in part by Hebei Natural Science Fund Key Project (Study on Health Condition Degradation and Remaining Life Prediction of HVDC Power Devices, No.E2017202284), and in part by Hebei Natural Science Foundation Project (Reliability Research of New Energy Grid-Connected Inverter driven by Big Data, No.E2019202481).

摘要/Abstract

摘要： 随着电力电子系统性能要求的不断提高，绝缘栅双极晶体管（insulated gate bipolar transistor，IGBT）模块不仅要拥有高功率密度，还要具有良好的热-机械性能，以提高其可靠性。首先介绍了IGBT模块的主要失效模式，对封装中键合线和焊料层失效机理进行了详细阐述，重点介绍了IGBT模块健康状态监测，分别对结温、键合线与焊料层健康状态监测及其量化评估研究进展进行了详细分析。最后，对降低热-机械应力以提高整机可靠性设计和运行工况下在线监测研究的发展前景进行了展望。

关键词: IGBT模块, 可靠性, 失效机理, 状态监测, 键合电阻, 瞬态热阻抗

Abstract: With the continuous increasing of the performance requirements for power electronic systems, the power device IGBT modules must not only have high power density, but also have good thermo-mechanical properties to improve their reliability. In this paper, the failure mechanism of IGBT modules is introduced firstly, and the failure mechanism of bonding wires and solder layers is described in detail. The health state monitoring of IGBT modules is mainly introduced, and the research progress of health monitoring about junction temperature, bonding wire and solder layer and their quantitative evaluations are analyzed in detail. Finally, from reducing the thermal-mechanical stress for improving the reliability design of the package and the on-line monitoring development under the operating conditions, the prospects are presented.

Key words: IGBT modules, reliability, failure mechanism, state monitoring, bonding resistance, transient thermal impedance

中图分类号:

TN322

王希平, 丁祥宽, 姚芳, 唐圣学, 李志刚. IGBT模块失效机理及状态监测研究综述[J]. 中国电力, 2019, 52(9): 61-72.

WANG Xiping, DING Xiangkuan, YAO Fang, TANG Shengxue, LI Zhigang. Review of Failure Mechanism and State Monitoring Technology for IGBT Modules[J]. Electric Power, 2019, 52(9): 61-72.

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参考文献

[1] 汤广福, 庞辉, 贺之渊. 先进交直流输电技术在中国的发展与应用[J]. 中国电机工程学报, 2016, 36(7):1760-1771
TANG Guangfu, PANG Hui, HE Zhiyuan. R&D and application of advanced power transmission technology in china[J]. Proceedings of the CSEE, 2016, 36(7):1760-1771
[2] 王敏, 宗炫君, 袁越, 等. 含光伏电站的发电系统可靠性分析[J]. 中国电机工程学报, 2013(34):42-49
WANG Min, ZONG Xuanjun, YUAN Yue,et al. Reliability analysis of generation systems with photovoltaic stations[J]. Proceedings of the CSEE, 2013(34):42-49
[3] BUSCA C, TEODORESCU R, BLAABJERG F, et al. An overview of the reliability prediction related aspects of high power IGBTs in wind power applications[J]. Microelectronics Reliability, 2011, 51(9-11):1903-1907.
[4] YANG S, BRYANT A, MAWBY P, et al. An industry based survey of reliability in power electronic converters[J]. IEEE Transactions on Industry Applications, 2011, 47(3):1441-1451.
[5] WANG H, LISERRE M, BLAABJERG F. Toward reliable power electronics:challenges, design tools, and opportunities[J]. IEEE Industrial Electronics Magazine, 2013, 7(2):17-26.
[6] CHOI U M, BLAABJERG F, LEE K B. Study and handling methods of power IGBT module failures in power electronic converter systems[J]. IEEE Transactions on Power Electronics, 2015, 30(5):2517-2533.
[7] HUGO G, FEDERICO B, MARIO J D. A IGBT-gating failure effect on a fault-tolerant predictive current-controlled five-phase induction motor drive[J]. IEEE Transactions on Industrial Electronics, 2015, 62(1):15-20.
[8] 王雪松, 赵争鸣, 袁立强, 等. 应用于大容量变换器的IGBT并联技术[J]. 电工技术学报, 2012, 27(10):155-162
WANG Xuesong, ZHAO Zhengming, YUAN Liqiang, et al. Parallel technique for IGBT modules applied in high-power converter[J]. Transactions of China Electrotechnical Society, 2012, 27(10):155-162
[9] DENG E, ZHAO Z, XIN Q, et al. Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs[J]. Microelectronics Reliability, 2017, 78:25-37.
[10] SADEGH M, MOSTAFA Z, SHAHRIYAR K, et al. A series stacked igbt switch with robustness against short-circuit fault for pulsed power applications[J]. IEEE Transactions on Power Electronics, 2018, 33(5):3779-3790.
[11] YANG Xin, YUAN Ye, LONG Zhiqiang, et al. Robust stability analysis of active voltage control for high-power igbt switching by Kharitonov's theorem[J]. IEEE Transactions on Power Electronics, 2016, 31(3):2584-2595.
[12] FEI Yang, HONG Chen, XIAOLI Tian. Investigation on Current Crowding Effect in IGBTs[J]. IEEE Transactions on Electron Devices, 2018, 65(2):636-640.
[13] 王春雷, 郑利兵, 方化潮, 等. 键合线失效对于IGBT模块性能的影响分析[J]. 电工技术学报, 2014, 29(增刊1):184-191.
WANG Chunlei, ZHENG Libing, FANG Huachao, et al. Analysis of the Performance Effect with Bonding Wires Lift-Off in IGBT Modules[J]. Transactions of China Electrotechnical Society, 2014, 29(S1):184-191.
[14] 孔梅娟. IGBT键合线故障特征分析和状态监测技术研究[D]. 天津:河北工业大学, 2017.
[15] 汪波, 胡安, 唐勇, 等. IGBT电压击穿特性分析[J]. 电工技术学报, 2011, 26(8):145-150
WANG Bo, HU An, TANG Yong, et al. Analysis of voltage breakdown characteristic of IGBT[J]. Transactions of China Electrotechnical Society, 2011, 26(8):145-150
[16] MAURO C. Selected failure mechanisms of modern power modules[J]. Microelectronics Reliability, 2002, 40(4-5):653-667.
[17] CIAPPA M, FICHTNER W. Lifetime prediction of IGBT modules for traction applications[C]//38th Annual IEEE International Reliability Physics Symposium Proceedings, San Jose, 2000:210-216.
[18] 姚芳, 马静, 唐圣学, 等. IGBT模块键合损伤机理、演化规律及状态监测[J]. 仪器仪表学报, 2019, 40(4):88-99
YAO Fang, MA Jing, TANG Shengxue, et al. Bonding damage mechanism, evolution rule and condition monitoring of IGBT module[J]. Chinese Journal of Scientific Instrument, 2019, 40(4):88-99
[19] 王学梅, 张波, 吴海平. 基于失效物理的功率器件疲劳失效机理[J]. 电工技术学报, 2019, 34(4):717-727
WANG Xuemei, ZHANG Bo, WU Haiping. A review of fatigue mechanism of power devices based on physics-of-failure[J]. Transactions of China Electrotechnical Society, 2019, 34(4):717-727
[20] 任磊, 韦徵, 龚春英, 等. 电力电子电路功率器件故障特征参数提取技术综述[J]. 中国电机工程学报, 2015, 35(12):3089-3101
REN Lei, WEI Zheng, GONG Chunying, et al. Fault feature extraction techniques for power devices in power electronic converters:A review[J]. Proceedings of the CSEE, 2015, 35(12):3089-3101
[21] CZERNY B, LEDERER M, NAGL B, et al. Thermo-mechanical analysis of bonding wires in IGBT modules under operating conditions[J]. Microelectronics Reliability, 2012, 52(9-10):2353-2357.
[22] CHOI U M, BLAABJERG F, JØRGENSEN S, et al. Power cycling test and failure analysis of molded intelligent power IGBT module under different temperature swing durations[J]. Microelectronics Reliability, 2016, 64:403-408.
[23] HUANG H, MAWBY P. A lifetime estimation technique for voltage source inverters[J]. IEEE Transactions on Power Electronics, 2013, 28(8):4113-4119.
[24] ZHUANG W, CHANG P, CHOU F, et al. Effect of solder creep on the reliability of large area die attachment[J]. Microelectronics Reliability, 2001, 41(12):2011-2021.
[25] BOUARROUDJ M, KHATIR Z, OUSTEN J P, et al. Comparison of stress distributions and failure modes during thermal cycling and power cycling on high power IGBT modules[C]//2007 European Conference on Power Electronics and Applications, Aalborg, Denmark, 2007:1-10.
[26] 肖飞, 罗毅飞, 刘宾礼, 等. 焊料层空洞对IGBT器件热稳定性的影响[J]. 高电压技术, 2018, 44(5):1499-1506
XIAO Fei, LUO Yifei, LIU Binli, et al. Influence of voids in solder layer on the temperature stability of IGBTs[J]. High Voltage Engineering, 2018, 44(5):1499-1506
[27] 孙海峰, 杨舒曼. 焊料层空洞对绝缘栅双极型晶体管(IGBT)模块温度分布的影响[J]. 科学技术与工程, 2018, 18(32):189-194
SUN Haifeng, YANG Shuman. Influence of solder void on temperature distribution of insulated gate bipolar transistor (IGBT) module[J]. Science Technology and Engineering, 2018, 18(32):189-194
[28] SMET V, FOREST F, HUSELSTEIN J J, et al. Ageing and failure modes of IGBT modules in high-temperature power cycling[J]. IEEE Transactions on Industrial Electronics, 2011, 58(10):4931-4941.
[29] XU L, WANG M, ZHOU Y, et al. An optimal structural design to improve the reliability of Al₂O₃-DBC substrates under thermal cycling[J]. Microelectronics Reliability, 2015, 56(6):101-108.
[30] BAZZO J P, TIAGO L, MARCIO V, et al. Thermal characteristics analysis of an IGBT using a fiber brag grating[J]. Optics and Lasers in Engineering, 2012, 50(2):99-103.
[31] MAHERA M, PAUL P A, JOⅡNSON C M, et al. Power electronic device temperature estimation and control in pulsed and converter applications[J]. Control Engineering Practice, 2008, 16(2):1438-1442.
[32] 黄欢. IGBT功率模块热传导与退化研究[D]. 天津:河北工业大学, 2015.
[33] 李武华, 陈玉香, 罗皓泽, 等. 大容量电力电子器件结温提取原理综述及展望[J]. 中国电机工程学报, 2016, 36(13):3546-3557
LI Wuhua, CHEN Yuxiang, LUO Haoze, et al. Review and prospect of junction temperature extraction principle of high power semiconductor devices[J]. Proceedings of the CSEE, 2016, 36(13):3546-3557
[34] COVA P, FANTINI F. On the effect of power cycling stress on IGBT modules[J]. Microelectronics Reliability, 1998, 38(6-8):1347-1352.
[35] BRYANT A, YANG S, MAWBY P, et al. Investigation into IGBT dv/dt during turn-off and its temperature dependence[J]. IEEE Transactions on Power Electronics, 2011, 26(10):3019-3031.
[36] CASTELLAZZI A, MERMET-GUYENNET M, BARLINI D, et al. New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions[J]. Microelectronics Reliability, 2006, 46(9):1772-1777.
[37] CHEN Yuxiang, LUO Haoze, LI Wuhua, et al. Analytical and experimental investigation on a dynamic thermo-sensitive electrical parameter with maximum di_c/dt during turn-off for high power trench gate/field-stop IGBT modules[J]. IEEE Transactions on Power Electronics, 2017, 32(8):6394-6404.
[38] 彭英舟, 周雒维, 孙鹏菊, 等. 基于开通密勒平台电压的IGBT模块结温估计研究[J]. 中国电机工程学报, 2017, 37(11):3254-3262,3381
PENG Yingzhou, ZHOU Luowei, SUN Pengju, et al. Study of IGBT junction temperature estimation based on turn-on miller platform voltage[J]. Proceedings of the CSEE, 2017, 37(11):3254-3262,3381
[39] SUNDARAMOORTHY V, BIANDA E, BLOCH R, et al. Online estimation of IGBT junction temperature (T_j) using gate-emitter voltage (V_ge) at turn-off[C]//2013 15th European Conference on Power Electronics and Applications (EPE). 2013:1-10.
[40] 刘宾礼, 刘德志, 唐勇, 等. 基于IGBT栅极疲劳机理的阈值电压可靠性模型研究[J]. 电力电子技术, 2015, 49(4):36-38, 60
LIU Binli, LIU Dezhi, TANG Yong, et al. Reliability model research of threshold voltage based on the gate fatigue mechanism of IGBT[J]. Power Electronics, 2015, 49(4):36-38, 60
[41] STRAUSS B, LINDEMANN A. Measuring the junction temperature of an IGBT using its threshold voltage as a temperature sensitive electrical parameter (TSEP)[C]//2016 13th International Multi-Conference on Systems, Signals & Devices (SSD), 2016:459-467.
[42] LUO Haoze, CHEN Yuxiang, SUN Pengfei, et al. Junction temperature extraction approach with turn-off delay time for high-voltage high-power IGBT modules[J]. IEEE Transactions on Power Electronics, 2016, 31(7):5122-5132.
[43] CCOA B A J, STRAUSS B, MITIC G, et al. Investigation of temperature sensitive electrical parameters for power semiconductors (IGBT) in real-time applications[C]//PCIM Europe, 2014:1-9.
[44] BAKER N, MUNK-NIELSEN S, LISERRE M, et al. Online junction temperature measurement via internal gate resistance during turn-on[C]//EPE'14-ECCE Europe, 2014:1-10.
[45] XU Zhuxian, XU Fan, WANG Fei. Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation[J]. IEEE Transactions on Industrial Electronics, 2015, 62(6):3419-3429.
[46] 李亚萍, 周雒维, 孙鹏菊, 等. 基于特定集电极电流下饱和压降的IGBT模块老化失效状态监测方法[J]. 电工技术学报, 2018, 33(14):3202-3212
LI Yaping, ZHOU Luowei, SUN Pengju, et al. Condition monitoring for IGBT module aging failure on VCE(on) under certain IC conditions[J]. Transactions of China Electrotechnical Society, 2018, 33(14):3202-3212
[47] PEDERSEN K B, KRISTENSEN P K, PEDERSEN P, et al. Degradation assessment in IGBT modules using four-point probing approach[J]. IEEE Transactions on Power Electronics, 2015, 30(5):2405-2412.
[48] WEI K X, DU M X, XIE L L, et al. Study of bonding wire failure effects on external measurable signals of IGBT module[J]. IEEE Transactions on Device and Materials Reliability, 2014, 14(1):83-89.
[49] SMET V, FOREST F, HUSELSTEIN J J, et al. Evaluation of V_ce monitoring as a real-time method to estimate aging of bond wire-IGBT modules stressed by power cycling[J]. IEEE Transactions on Industrial Electronics, 2013, 60(7):2760-2770.
[50] ZHOU L W, ZHOU S Q, XU M W. Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off[J]. Microelectronics Reliability, 2013, 53(2):282-287.
[51] PENG Y Z, ZHOU L W, DU X, et al. Junction temperature estimation of IGBT module via a bond wires lift-off independent parameter VgE-np[J]. IET Power Electronics, 2018, 11(2):320-328.
[52] 孔梅娟, 李志刚. IGBT模块通态电阻与键合线故障关系研究[J]. 电力电子技术, 2017, 51(11):91-93
KONG Meijuan, LI Zhigang. Study on the relationship between the on-resistance and the bonding-wire lift of the IGBT module[J]. Power Electronics, 2017, 51(11):91-93
[53] BABEL A S, MUETZE A, SEEBACHER R R, et al. Inverter device nonlinearity characterization technique for use in a motor drive system[J]. IEEE Transactions on Industry Applications, 2015, 51(3):2331-2339.
[54] WANG Z, TIAN B, QIAO W, et al. Real-time aging monitoring for IGBT modules using case temperature[J]. IEEE Transactions on Industrial Electronics, 2016, 63(2):1168-1178.
[55] 陈民铀, 高兵, 杨帆, 等. 基于电-热-机械应力多物理场的IGBT焊料层健康状态研究[J]. 电工技术学报, 2015, 30(20):252-260
CHEN Minyou, GAO Bing, YANG Fan, et al. Healthy evaluation on IGBT solder based on electro-thermal-mechanical analysis[J]. Transactions of China Electrotechnical Society, 2015, 30(20):252-260
[56] GAO B, YANG F, CHEN M, et al. A temperature gradient based condition estimation method for IGBT module[J]. IEEE Transactions on Power Electronics, 2016, 32(3):1-10.
[57] XIANG D, RAN L, TAVNER P, et al. Monitoring solder fatigue in a power module using case-above-ambient temperature rise[J]. IEEE Transactions on Industry Applications, 2012, 47(6):2578-2591.
[58] 陈一高, 陈民铀, 高兵, 等. 基于瞬态热阻的IGBT焊料层失效分析[J]. 中国电机工程学报, 2018, 38(10):3059-3067,3157
CHEN Yigao, CHEN Minyou, GAO Bing, et al. Evaluation of solder failure of an IGBT module based on transient thermal impedance[J]. Proceedings of the CSEE, 2018, 38(10):3059-3067,3157

IGBT模块失效机理及状态监测研究综述

Review of Failure Mechanism and State Monitoring Technology for IGBT Modules

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[15]	李晓, 李满礼, 倪明. 配电信息物理系统分析与控制研究综述[J]. 中国电力, 2020, 53(1): 11-21.

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IGBT模块失效机理及状态监测研究综述

Review of Failure Mechanism and State Monitoring Technology for IGBT Modules

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