Electric Power ›› 2021, Vol. 54 ›› Issue (1): 19-24.DOI: 10.11930/j.issn.1004-9649.202005037

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Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC

LOU Yantao1, SUN Xiaoping1, LIU Qi1, ZHOU Wenpeng2, ZHAO Biao2, YU Zhanqing2, ZENG Rong2   

  1. 1. Xi'an XD Power Systems Co., Ltd., Xi'an 710065, China;
    2. Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
  • Received:2020-05-06 Revised:2020-10-11 Online:2021-01-05 Published:2021-01-11
  • Supported by:
    This work is supported by the Key-Area Research and Development Program of Guangdong Province (No.2019B111109001)

Abstract: The reverse recovery characteristics of the diode plays an important role in IGCT-MMC. This paper firstly introduces the reverse recovery characteristics of the fast recovery diode. Then the switching behaviors of the fast recovery diode in the IGCT-MMC topology are analyzed. Finally a double-pulse experimental platform is built for IGCT-MMC testing, and the reverse recovery characteristics of three commercial fast recovery diode products are compared. The test results show that the reverse recovery peak current and power of the fast recovery diode have a linear relationship with di/dt, and the testing result at high temperature are higher than that at room temperature. While under the same di/dt and temperature conditions, different fast recovery diodes have different reverse recovery peak currents and powers in IGCT-MMC. As a result, it is necessary to choose a suitable di/dt according to the safe working area of the diode in IGCT-MMC.

Key words: IGCT-MMC, fast recovery diode, reverse recovery peak current, reverse recovery peak power, safe operating area