压接IGBT器件并联子模组热阻分布实验研究

doi:10.11930/j.issn.1004-9649.202007196

中国电力 ›› 2020, Vol. 53 ›› Issue (12): 37-44.DOI: 10.11930/j.issn.1004-9649.202007196

• 国家“十三五”智能电网重大专项专栏：（三 ) 高压大功率 IGBT 及应用技术专栏 • 上一篇下一篇

压接IGBT器件并联子模组热阻分布实验研究

韩鲁斌, 梁琳, 康勇

华中科技大学电气与电子工程学院（电力电子与能量管理教育部重点实验室），湖北武汉 430074

收稿日期:2020-08-04 修回日期:2020-11-02 发布日期:2020-12-16
作者简介:韩鲁斌(1994—)，男，博士，从事功率半导体建模、特性和可靠性研究，E-mail：d201780378@hust.edu.cn;梁琳(1981—)，女，通信作者，研究员，从事功率半导体器件、封装、可靠性及其应用研究，E-mail：lianglin@hust.edu.cn;康勇(1965—)，男，教授，从事电力电子拓扑、控制及应用，宽禁带半导体器件封装、集成及应用，新能源发电装备与系统研究，电能质量控制，交直流传动，电磁兼容技术研究，E-mail：ykang@mail.hust.edu.cn
基金资助:
国家重点研发计划资助项目(2016YFB0901800)

Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device

HAN Lubin, LIANG Lin, KANG Yong

School of Electrical and Electronic Engineering, Huazhong University of Science and Technology (Key Laboratory of Power Electronics and Energy Management, Ministry of Education of China), Wuhan 430074, China

Received:2020-08-04 Revised:2020-11-02 Published:2020-12-16
Supported by:
This work is supported by National Key R&D Program of China (No.2016YFB0901800)

摘要/Abstract

摘要： 在刚性压接型IGBT模块中，并联芯片的压力分布直接决定了接触热阻和接触电阻的大小。通常无法测量器件正常工作时的压力分布及其引起的热阻分布。为了分析压接IGBT模块内部各子模组的压力分布情况和热阻分布情况，提出一种利用器件特性和热阻实验测量压接IGBT模块并联子模组热阻分布的方法。在此方法基础上，详细研究不同压力和电流条件下的热阻分布。实验结果表明，由于外部压力、器件特性和连接导体的差异，压接IGBT模块内部并联子模组间的结温、电流和热阻分布具有很大的分散性。提出的测量方法可以有效验证压接IGBT模块在一定封装条件下的结温、热阻和压力分布特性。

关键词: 压接IGBT, 热阻测量, 温度分布, 压力分布, 热阻分布

Abstract: In the rigid Press-Pack IGBT module, the pressure distribution of parallel chips determines the contact thermal resistance and contact electrical resistance directly. However, the distribution of pressure and thermal resistance cannot be measured during the normal operation. In order to analyze the pressure distribution and thermal resistance distribution of each sub-module in the Press-Pack IGBT module, the method of measuring the thermal resistance distribution of the parallel sub-modules of the Press-Pack IGBT module is proposed, which is based on the devices characteristics and thermal resistance test. Then, the distributions of thermal resistance under different pressures and currents are studied in detail. The experimental results show that the distribution of junction temperature, current and thermal resistance among the parallel sub-modules in the IGBT module are greatly dispersed due to the difference of external pressure, devices characteristics and connecting conductors. The proposed measurement method could effectively verify the distribution characteristics of junction temperature, thermal resistance and pressure of the Press-Pack IGBT module under certain packaging conditions.

Key words: press-pack IGBT, thermal resistance measurement, temperature distribution, pressure distribution, thermal resistance distribution

韩鲁斌, 梁琳, 康勇. 压接IGBT器件并联子模组热阻分布实验研究[J]. 中国电力, 2020, 53(12): 37-44.

HAN Lubin, LIANG Lin, KANG Yong. Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device[J]. Electric Power, 2020, 53(12): 37-44.

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https://www.electricpower.com.cn/CN/Y2020/V53/I12/37

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压接IGBT器件并联子模组热阻分布实验研究

Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device

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