高压大功率器件用高温栅偏测试装置研制

doi:10.11930/j.issn.1004-9649.201907093

中国电力 ›› 2019, Vol. 52 ›› Issue (9): 48-53,72.DOI: 10.11930/j.issn.1004-9649.201907093

• 电力电子器件可靠性专栏 • 上一篇下一篇

高压大功率器件用高温栅偏测试装置研制

邓二平, 孟鹤立, 王延浩, 吴宇轩, 赵志斌, 黄永章

新能源电力系统国家重点实验室(华北电力大学), 北京昌平 102206

收稿日期:2019-07-10 修回日期:2019-07-19 出版日期:2019-09-05 发布日期:2019-09-19
通讯作者: 邓二平(1989-),男,第一作者,通信作者,博士,讲师,从事高压大功率电力电子器件封装及可靠性研究,E-mail:dengerpinghit@163.com
作者简介:邓二平(1989-),男,通信作者,博士,讲师,从事高压大功率电力电子器件封装及可靠性研究,E-mail:dengerpinghit@163.com;孟鹤立(1993-),男,博士研究生,从事大功率器件早期失效机理和高温可靠性研究,E-mail:mengheli888@163.com;王延浩(1996-),男,硕士研究生,从事电动汽车用功率模块可靠性仿真分析以及失效分析,E-mail:wyh18800107889@163.com;吴宇轩(1995-),男,硕士研究生,从事压接型IGBT器件可靠性研究,E-mail:ww19950217@163.com;赵志斌(1977-),男,博士,教授,从事大功率半导体器件及应用研究,E-mail:zhibinzhao@126.com;黄永章(1962-),男,博士,教授,从事高压大功率IGBT器件工艺、封装技术、联合仿真和电力电子器件在新能源电力系统的应用研究,E-mail:huang_y_z@ncepu.edu.cn
基金资助:
中央高校基本科研专项资金资助项目（高压大功率IGBT器件老化耦合机理研究，2019MS001）。

High Temperature Gate Bias Test Equipment for High Voltage and High Power Devices

DENG Erping, MENG Heli, WANG Yanhao, WU Yuxuan, ZHAO Zhibin, HUANG Yongzhang

State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), Beijing 102206, China

Received:2019-07-10 Revised:2019-07-19 Online:2019-09-05 Published:2019-09-19
Supported by:
This work is supported by the Fundamental Research Funds for the Central Universities (No. 2019MS001).

摘要/Abstract

摘要： 为准确评估硅IGBT和碳化硅MOSFET等高压大功率器件不同电应力及热应力条件下的栅极可靠性，研制了实时测量皮安级栅极漏电流的高温栅偏（high temperature gate bias，HTGB）测试装置。此外，该测试装置具备阈值电压在线监测功能，可以更好地监测被测器件的状态以进行可靠性评估和失效分析。为初步验证测试装置的各项功能和可靠性，运用该测试装置对商用IGBT器件在相同温度应力不同电应力条件下进行分组测试。初步测试结果表明老化初期漏电流逐渐降低，最终漏电流大小与电压应力有良好的正相关性，栅偏电压越大，漏电流越大。该测试装置实现了碳化硅MOSFET器件和硅IGBT器件对高温栅偏的测试需求且适用于各种类型的封装。

关键词: 高压大功率器件, IGBT器件, 碳化硅MOSFET器件, 高温栅偏测试, 阈值电压

Abstract: In order to accurately evaluate the gate oxide reliability of silicon IGBTs and silicon carbide MOSFETs under different electrical stresses and thermal stresses, a high temperature gate bias test equipment was developed, which is capable of measuring pico ampere level gate oxide leakage current in real time. Further,an on-line monitoring function of threshold voltage is integrated into the test equipment so as to better monitor the status of the tested equipment for reliability evaluation and failure analysis. With this equipment, the high temperature gate bias of commercial insulated gate bipolar transistor (IGBT) devices were tested under the same temperature stress and different electrical stresses. The leakage current gradually decreases at the initial stage of the test. The leakage current has a decent positive correlation with the voltage level at the end of the test-the larger the gate bias voltage, the larger the leakage current. Suitable for various kinds of packages, this equipment meets the test requirements of for high temperature gate bias of silicon carbide MOSFETs as well as silicon IGBTs.

Key words: high voltage and high power devices, IGBT devices, silicon carbide MOSFET, HTGBtest, threshold voltage

中图分类号:

TN304.07

邓二平, 孟鹤立, 王延浩, 吴宇轩, 赵志斌, 黄永章. 高压大功率器件用高温栅偏测试装置研制[J]. 中国电力, 2019, 52(9): 48-53,72.

DENG Erping, MENG Heli, WANG Yanhao, WU Yuxuan, ZHAO Zhibin, HUANG Yongzhang. High Temperature Gate Bias Test Equipment for High Voltage and High Power Devices[J]. Electric Power, 2019, 52(9): 48-53,72.

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高压大功率器件用高温栅偏测试装置研制

High Temperature Gate Bias Test Equipment for High Voltage and High Power Devices

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