高压大功率器件用6 kV/180 ℃高温反偏测试装置研制

doi:10.11930/j.issn.1004-9649.201906002

中国电力 ›› 2021, Vol. 54 ›› Issue (2): 133-139.DOI: 10.11930/j.issn.1004-9649.201906002

高压大功率器件用6 kV/180 ℃高温反偏测试装置研制

邓二平, 孟鹤立, 王延浩, 赵志斌, 黄永章

新能源电力系统国家重点实验室（华北电力大学），北京 102206

收稿日期:2019-06-06 修回日期:2019-07-19 发布日期:2021-02-06
作者简介:邓二平(1989-),男,通信作者,博士,讲师,从事高压大功率电力电子器件可靠性研究,E-mail:dengerpinghit@163.com
基金资助:
中央高校基本科研专项资金（高压大功率IGBT器件老化耦合机理研究，2019MS001）。

6 kV/180 ℃ High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices

DENG Erping, MENG Heli, WANG Yanhao, ZHAO Zhibin, HUANG Yongzhang

State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), Beijing 102206, China

Received:2019-06-06 Revised:2019-07-19 Published:2021-02-06
Supported by:
This work is supported by the Fundamental Research Funds for the Central Universities (No.2019MS001)

摘要/Abstract

摘要： 高温反偏测试（high temperature reverse bias，HTRB）作为功率器件可靠性测试的重要环节，其测试装置的精度和功能决定了对被测器件老化程度判定的准确性。针对高压大功率器件对测试装置空间、精度以及可靠性的需求，自主研制出了电压等级6 kV、环境温度180 ℃的高温反偏测试装置。此外，该测试装置还集成了温度-漏电流关系曲线自动测量及失效期数据高频采集等功能，更为准确灵活地监测被测器件的状态，进行可靠性评估与失效分析。为验证该测试装置的各项功能及可靠性，使用该装置对商业IGBT器件进行了测试，初步测试结果表明：温度与漏电流呈指数关系，集射极漏电流随着老化的进行逐渐增大。该装置符合高压大功率半导体器件对高温反偏测试的需求且适用于不同封装的IGBT器件。

关键词: 高压大功率IGBT器件, 高温反偏测试, 加速老化试验, 终端, 漏电流

Abstract: High Temperature Reverse Bias (HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the tested device. To Meet the requirements of space, accuracy and reliability for test equipment, HTRB test equipment with voltage level of 6 kV and ambient temperature of 180 ℃ was independently built for high voltage and high power devices. Further, the test equipment integrates some functions such as automatic measurement of temperature-drain current relationship curve and high-frequency acquisition of failure data, which can better monitor the state of the tested device for reliability evaluation and failure analysis. For the purpose of testing the function and reliability of the test device and getting the relationship curve of leakage current–temperature and aging time–leakage current, some commercial IGBT devices were tested with the equipment. Leakage current–temperature curve is an exponential function and aging time–leakage current curve is increasing slowly. This equipment realizes the test requirement of high voltage and high power devices, suiting for different packages of IGBTs.

Key words: high voltage and high power IGBTs, HTRB, accelerated aging testing, edge termination, leakage current

邓二平, 孟鹤立, 王延浩, 赵志斌, 黄永章. 高压大功率器件用6 kV/180 ℃高温反偏测试装置研制[J]. 中国电力, 2021, 54(2): 133-139.

DENG Erping, MENG Heli, WANG Yanhao, ZHAO Zhibin, HUANG Yongzhang. 6 kV/180 ℃ High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices[J]. Electric Power, 2021, 54(2): 133-139.

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参考文献

[1] 梁旭明, 张平, 常勇. 高压直流输电技术现状及发展前景[J]. 电网技术, 2012, 36(4): 1-9
LIANG Xuming, ZHANG Ping, CHANG Yong. Recent advances in high-voltage direct-current power transmission and its developing potential[J]. Power System Technology, 2012, 36(4): 1-9
[2] 邓二平, 张经纬, 李尧圣, 等. 焊接式IGBT模块与压接型IGBT器件可靠性差异分析[J]. 半导体技术, 2016, 41(11): 801-810, 815
DENG Erping, ZHANG Jingwei, LI Yaosheng, et al. Analysis of the reliability difference between IGBT modules and press-pack IGBTs[J]. Semiconductor Technology, 2016, 41(11): 801-810, 815
[3] Semiconductor Quality and Reliability Handbook, Chapter 2 Semiconductor Device Reliability Verification[EB/OL]. [2012-11-06].http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.126.1621.
[4] 董少华, 刘钺杨, 何延强, 等. HTRB试验方法及现象研究[J]. 智能电网, 2016, 4(12): 1200-1203
DONG Shaohua, LIU Yueyang, HE Yanqiang, et al. Research on the test method and results of HTRB[J]. Smart Grid, 2016, 4(12): 1200-1203
[5] 樊强. 高加速寿命试验和高加速应力筛选试验技术综述[J]. 电子产品可靠性与环境试验, 2011, 29(4): 58-62
FAN Qiang. Overview of HALT & HASS[J]. Electronic Product Reliability and Environmental Testing, 2011, 29(4): 58-62
[6] International Electrotechnical Commission. Semiconductor devicesdiscrete devices-part 9: insulated-gate bipolar transistors (IGBTs): IEC 60747-9[S]. Switzerland, 2001．
[7] Department of Defense Supply Center. Semiconductor devices, general specification for: MIL-PRF-19500N[S]. 2005.
[8] MAIGA C O, TALA-IGHIL B, TOUTAH H, et al. Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution[C]//European Conference on Power Electronics & Applications. IEEE, 2006.
[9] MAÏGA, CHEICK O, TOUTAH H, et al. Comparison between the behaviour of punch-through and non-punch-through insulated gate bipolar transistors under high temperature reverse bias stress[J]. Microelectronics Reliability, 2004, 44(9/10/11): 1461-1465.
[10] SAMBI M, GALLO M, GALBIATI P. 190V N-channel lateral IGBT integration in SOI 0.35 μm BCD technology[C]//2008 IEEE International Electron Devices Meeting. IEEE, 2009.
[11] TOŠIĆ N, PEŠIĆ B, STOJADINOVIĆ N. High-temperature-reverse-bias testing of power VDMOS transistors[J]. Microelectronics and Reliability, 1997, 37(10/11): 1759-1762.
[12] OKAYAMA T, ARTHUR S D, RAO R R, et al. Stability and 2-D simulation studies of avalanche breakdown in 4H-SiC DMOSFETs with JTE[J]. IEEE Transactions on Electron Devices, 2008, 55(2): 489-494.
[13] HUANG C F, HSU H C, CHU K W, et al. Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 354-358.
[14] CONSENTINO G, DE PASQUALE D, GALIANO S, et al. Innovative instrumentation for HTRB tests on semiconductor power devices[C]//AEIT Annual Conference 2013. Mondello (Italy): IEEE, 2013.
[15] HU J, STOFFELS S, ZHAO M, et al. Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests[J]. IEEE Electron Device Letters, 2017, 38(3): 371-374.
[16] GREEN R, LELIS A, HABERSAT D. Application of reliability test standards to SiC Power MOSFETs[C]//Reliability Physics Symposium. IEEE, 2011.
[17] HOFFMANN F, MIHAILA A, KRANZ L, et al. Long term high temperature reverse bias (HTRB) test on high voltage SiC-JBS-diodes[C]//2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2018.
[18] MATSUSHIMA H, YAMADA R, SHIMA A. Two mechanisms of charge accumulation in edge termination of 4H-SiC diodes caused by high-temperature bias stress and high-temperature and high-humidity bias stress[J]. IEEE Transactions on Electron Devices, 2018, 65(8): 3318-3325.
[19] AVINO-SALVADO O, CHENG C, BUTTAY C, et al. SiC MOSFETs robustness for diode-less applications[J]. EPE Journal, 2018, 28(3): 128-135.
[20] 郝林钊, 何山, 王维庆, 等. 一种基于CR-CD型电路的直驱风机变流器IGBT过电压保护电路研究[J]. 电力系统保护与控制, 2019, 47(9): 150-157.
HAO Linzhao, HE Shan, WANG Weiqing, et al. Research on IGBT overvoltage protection circuit of direct drive wind turbine converter based on CR-CD circuit[J]. Power System Protection and Control, 2019, 47(9): 150-157.

高压大功率器件用6 kV/180 ℃高温反偏测试装置研制

6 kV/180 ℃ High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices

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高压大功率器件用6 kV/180 ℃高温反偏测试装置研制

6 kV/180 ℃ High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices

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