一种复合终端逆阻IGBT数值仿真分析

doi:10.11930/j.issn.1004-9649.202011058

中国电力 ›› 2022, Vol. 55 ›› Issue (9): 98-104.DOI: 10.11930/j.issn.1004-9649.202011058

一种复合终端逆阻IGBT数值仿真分析

崔磊¹, 杨通¹, 张如亮², 马丽³, 李旖晨³

1. 国网智能电网研究院有限公司，北京 102209;
2. 西安理工大学电子工程系，陕西西安 710048;
3. 西安理工大学应用物理系，陕西西安 710048

收稿日期:2020-11-13 修回日期:2022-08-04 发布日期:2022-09-20
作者简介:崔磊（1985—），男，通信作者，博士，高级工程师，从事电力半导体技术研究，E-mail：88572726@qq.com;杨通（1985—），男，硕士，高级工程师，从事电力电子技术研究，E-mail：yangtong@geiri.sgcc.com.cn
基金资助:
国家重大研发计划资助项目（2015ZX02301002）；国网智能电网研究院有限公司科技项目（53ZCGB190001）。

Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT

CUI Lei¹, YANG Tong¹, ZHANG Ruliang², MA Li³, LI Yichen³

1. State Grid Smart Grid Research Institute Co. Ltd., Beijing 102209, China;
2. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;
3. Department of Applied Physics, Xi'an University of Technology, Xi'an 710048, China

Received:2020-11-13 Revised:2022-08-04 Published:2022-09-20
Supported by:
This work is supported by National Major Special Project of China (No.2015ZX02301) and Self-financing Technology Project of State Grid Smart Grid Research Institute Co. Ltd., (No.53ZCGB190001)

摘要/Abstract

摘要： 绝缘栅双极型晶体管（insulated gate bipolar transistor，IGBT）本身不具有反向阻断能力，因此在电路中通常与二极管组合使用。为降低使用成本，减小寄生电感，续流二极管与IGBT通过工艺集成在同一芯片上，由此提出了具有反向阻断能力的逆阻型IGBT。针对常规逆阻IGBT终端面积大的问题，提出了一种改进型复合终端结构，采用双掺杂场限环，在P型场限环旁边引入N型轻掺杂区。改进结构减小了耗尽区横向扩展速率，增强器件可靠性，节省终端面积占用并提高了终端效率。

关键词: 绝缘栅双极型晶体管, 逆阻, 场限环, 复合终端, 双掺杂场限环

Abstract: Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability. In order to reduce cost and parasitic inductance, the freewheeling diode and IGBT are integrated by process method, and a reverse blocking insulated gate bipolar transistor (RB-IGBT) is thus proposed. For reducing the terminal area of conventional reverse blocking IGBT, an improved composite terminal structure is proposed. The double doped field limiting ring is used to introduce a n-type low doping region near the p-type field limiting ring, which can reduce the lateral expansion rate of depletion region, increase device reliability, improve terminal efficiency and save terminal size.

Key words: insulated gate bipolar transistor, reverse blocking, field limiting ring, composite terminal, double doped field limiting ring

崔磊, 杨通, 张如亮, 马丽, 李旖晨. 一种复合终端逆阻IGBT数值仿真分析[J]. 中国电力, 2022, 55(9): 98-104.

CUI Lei, YANG Tong, ZHANG Ruliang, MA Li, LI Yichen. Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT[J]. Electric Power, 2022, 55(9): 98-104.

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一种复合终端逆阻IGBT数值仿真分析

Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT

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一种复合终端逆阻IGBT数值仿真分析

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