Abstract: The reverse recovery characteristics of the diode plays an important role in IGCT-MMC. This paper firstly introduces the reverse recovery characteristics of the fast recovery diode. Then the switching behaviors of the fast recovery diode in the IGCT-MMC topology are analyzed. Finally a double-pulse experimental platform is built for IGCT-MMC testing, and the reverse recovery characteristics of three commercial fast recovery diode products are compared. The test results show that the reverse recovery peak current and power of the fast recovery diode have a linear relationship with di/dt, and the testing result at high temperature are higher than that at room temperature. While under the same di/dt and temperature conditions, different fast recovery diodes have different reverse recovery peak currents and powers in IGCT-MMC. As a result, it is necessary to choose a suitable di/dt according to the safe working area of the diode in IGCT-MMC.