IGCT-MMC中二极管反向恢复特性分析与测试

doi:10.11930/j.issn.1004-9649.202005037

中国电力 ›› 2021, Vol. 54 ›› Issue (1): 19-24.DOI: 10.11930/j.issn.1004-9649.202005037

• 国家“十三五”智能电网重大专项专栏：（四）柔性直流电网技术、装备与工程 • 上一篇下一篇

IGCT-MMC中二极管反向恢复特性分析与测试

娄彦涛¹, 孙小平¹, 刘琦¹, 周文鹏², 赵彪², 余占清², 曾嵘²

1. 西安西电电力系统有限公司，陕西西安 710065;
2. 清华大学电机工程与应用电子技术系，北京 100084

收稿日期:2020-05-06 修回日期:2020-10-11 出版日期:2021-01-05 发布日期:2021-01-11
作者简介:娄彦涛(1982—)，男，工学硕士，高级工程师，从事高压直流输电技术及绝缘配合研究，E-mail：louyt@xdps.com.cn;孙小平(1985—)，女，通信作者，工学硕士，高级工程师，从事柔性直流输配电技术及其工程应用研究，E-mail：289817457@qq.com
基金资助:
广东省重点领域研发计划资助项目(2019B111109001)

Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC

LOU Yantao¹, SUN Xiaoping¹, LIU Qi¹, ZHOU Wenpeng², ZHAO Biao², YU Zhanqing², ZENG Rong²

1. Xi'an XD Power Systems Co., Ltd., Xi'an 710065, China;
2. Department of Electrical Engineering, Tsinghua University, Beijing 100084, China

Received:2020-05-06 Revised:2020-10-11 Online:2021-01-05 Published:2021-01-11
Supported by:
This work is supported by the Key-Area Research and Development Program of Guangdong Province (No.2019B111109001)

摘要/Abstract

摘要： 二极管的反向恢复特性在IGCT-MMC中起着重要的作用。首先介绍快恢复二极管的反向恢复特性，然后在IGCT-MMC拓扑中介绍快恢复二极管的开关行为，最后搭建适用于IGCT-MMC测试的双脉冲实验平台，并对比了3种商业化快恢复二极管产品的反向恢复特性。最终的测试结果表明，快恢复二极管的反向恢复峰值电流和功率与di/dt呈现线性关系，并且在高温下的测试结果要高于常温。而在相同的di/dt和温度条件下，不同的快恢复二极管在IGCT-MMC中反向恢复峰值电流和功率存在差异，在实际应用中需要根据二极管的安全工作区对di/dt进行合理设计。

关键词: IGCT-MMC, 快恢复二极管, 反向恢复峰值电流, 反向恢复峰值功率, 安全工作区

Abstract: The reverse recovery characteristics of the diode plays an important role in IGCT-MMC. This paper firstly introduces the reverse recovery characteristics of the fast recovery diode. Then the switching behaviors of the fast recovery diode in the IGCT-MMC topology are analyzed. Finally a double-pulse experimental platform is built for IGCT-MMC testing, and the reverse recovery characteristics of three commercial fast recovery diode products are compared. The test results show that the reverse recovery peak current and power of the fast recovery diode have a linear relationship with di/dt, and the testing result at high temperature are higher than that at room temperature. While under the same di/dt and temperature conditions, different fast recovery diodes have different reverse recovery peak currents and powers in IGCT-MMC. As a result, it is necessary to choose a suitable di/dt according to the safe working area of the diode in IGCT-MMC.

Key words: IGCT-MMC, fast recovery diode, reverse recovery peak current, reverse recovery peak power, safe operating area

娄彦涛, 孙小平, 刘琦, 周文鹏, 赵彪, 余占清, 曾嵘. IGCT-MMC中二极管反向恢复特性分析与测试[J]. 中国电力, 2021, 54(1): 19-24.

LOU Yantao, SUN Xiaoping, LIU Qi, ZHOU Wenpeng, ZHAO Biao, YU Zhanqing, ZENG Rong. Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC[J]. Electric Power, 2021, 54(1): 19-24.

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IGCT-MMC中二极管反向恢复特性分析与测试

Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC

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IGCT-MMC中二极管反向恢复特性分析与测试

Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC

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